A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

A bonded body includes an aluminum member made of an aluminum alloy and a copper member made of copper or a copper alloy, in which the aluminum member is made of an Al—Mn-based alloy containing Mn, an Mn concentration C.sub.0 of the entire aluminum member is in a range of 0.4 mass % or more and 1.5 mass % or less, and, when an Mn concentration in a region excluding a precipitate in the aluminum member is defined as an Mn solid solution concentration C.sub.1 and a value obtained by subtracting the Mn solid solution concentration C.sub.1 from the Mn concentration C.sub.0 of the entire aluminum member is defined as an Mn precipitate concentration C.sub.2, a ratio C.sub.1/C.sub.2 of the Mn solid solution concentration C.sub.1 to the Mn precipitate concentration C.sub.2 is in a range of 0.1 or more and 2.7 or less.

A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

The present disclosure relates to a method for manufacturing a ceramic heater. The method for manufacturing a ceramic heater according to the present disclosure comprises: separately charging a ceramic powder into a center portion and multiple split edge portions in a formation mold and leveling the charged ceramic powder; manufacturing a molded body or pre-sintered body of the ceramic powder from the leveled ceramic powder; disposing a high-frequency electrode or a heating element on the molded body or pre-sintered body of the ceramic powder and filling a second ceramic powder; and integrally sintering the molded body or pre-sintered body of the ceramic powder and the second ceramic powder.

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90° is between the bevel of the device substrate and the handle substrate.

A power module substrate includes an insulating substrate and a metal plate. The metal plate is joined to the insulating substrate with a brazing material in between. As to surface roughness of a lateral surface of the metal plate in a thickness direction, the surface roughness of at least a corner part farthest from a center of the metal plate in plan view is larger than the surface roughness of plane parts sandwiching the corner part.

A ceramic heater includes: a ceramic plate which is provided with a wafer placement surface on an upper surface and in which a heating resistor is internally embedded; a ceramic tubular shaft with an upper end bonded to a lower surface of the plate; and power feeding members which penetrate a peripheral wall part of the tubular shaft in a vertical direction, and are electrically connected to the heating resistor. The power feeding members are embedded in the peripheral wall part of the tubular shaft, and are in tight contact with a ceramic material of the tubular shaft.

Provided are a ceramic substrate and a method of manufacturing the same, which suppress a warpage phenomenon caused by a difference in volumes occupied by upper and lower metal layers of a ceramic base material and controls areas of the upper and lower metal layers especially when thicknesses of the upper and lower metal layers on the ceramic base material are equal to each other, thereby reducing a defect rate of the ceramic substrate.

A production method for producing a product by joining a first part containing an inorganic powder and a binder to a second part containing an inorganic powder and a binder is provided. The production method includes a first step of forming the first part by a three-dimensional shaping apparatus, a second step of forming the second part, a third step of assembling the first part and the second part, thereby obtaining an assembly, a fourth step of heating the assembly at a first temperature, and a fifth step of heating the assembly at a second temperature higher than the first temperature after the fourth step, wherein the first part has a first region that comes in contact with the second part and a second region that does not come in contact with the second part, and a melting point of the binder contained in the first region is lower than a melting point of the binder contained in the second region.