A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

Hybrid composite materials including carbon nanotube sheets and flexible ceramic materials, and methods of making the same are provided herein. In one embodiment, a method of forming a hybrid composite material is provided, the method including: placing a layer of a first flexible ceramic composite on a lay-up tooling surface; applying a sheet of a pre-preg carbon fiber reinforced polymer on the flexible ceramic composite; curing the flexible ceramic composite and the pre-preg carbon fiber reinforced polymer sheet together to form a hybrid composite material; and removing the hybrid composite material from the lay-up tooling surface, wherein the first flexible ceramic composite comprises an exterior surface of the hybrid composite material.

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of vanes. The first rotor disk is configured to rotate about a rotational axis. The first rotor disk is configured from or otherwise includes disk material. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is axially between and mounted to the first rotor disk and the second rotor disk. The vanes are arranged circumferentially around the rotational axis and axially between the first rotor disk and the second rotor disk. The vanes include a first vane, which first vane is configured from or otherwise includes vane material that is different than the disk material.

A heat radiating substrate includes an insulating layer (11) (insulating substrate) and a circuit pattern (20) of a metal provided on the insulating layer (11) in direct contact with the insulating layer (11), in which a contour line of the circuit pattern (20) has a corner portion (27) that forms a curved line exhibiting a circular arc with a radius of 0.2 mm or more and 5 mm or less when viewed in a top view.

A semiconductor apparatus includes first and second semiconductor chips, and a circuit board. The circuit board is a laminated board sequentially including an insulating plate, a circuit layer, and a metal layer. The circuit layer includes a first mounting portion on which the first semiconductor chip is installed, a second mounting portion on which the second semiconductor chip is installed, and a first and second upper surface slit provided between the first and second mounting portion and extending in a first direction. The metal layer includes a first lower surface slit extending in the first direction. In a plan view, the first mounting portion, the first upper surface slit, the second upper surface slit, and the second mounting portion are provided side by side in the second direction. The first lower surface slit is located within a range defined by the first and second upper surface slit.