A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A hollow CMC article, a mandrel for forming the article and a method for forming the article are disclosed. The article includes a ply-wrap layer defining a cavity. The ply-wrap layer includes a first face, a second face, a root portion bridging the faces, and a plurality of CMC wrap plies. The root portion defines a terminus of the ply-wrap layer including a cross-sectional conformation consisting of a curve having a single turning point. Each of the plurality of CMC wrap plies are disposed along the first face, wrap over the root portion, and extend along the second face. The hollow article further includes a plurality of CMC lateral plies disposed along the faces.

Thermally-conductive ceramic and ceramic composite components suitable for high temperature applications, systems having such components, and methods of manufacturing such components. The thermally-conductive components are formed by a displacive compensation of porosity (DCP) process and are suitable for use at operating temperatures above 600° C. without a significant reduction in thermal and mechanical properties.

A composite member (1) satisfies the following expressions. X/(E×|CTE(B)−CTE(A)|)≥50, X/(E×|CTE(B)−CTE(C)|)≥50, Y/|CTE(B)−CTE(A)|×L(BA)≤50, and Y/|CTE(B)−CTE(C)|×L(BC)≥50. X: shear bond strength (MPa) between the heat dissipating base substrate and heat generating member, Y: fracture elongation of the thermoconductive insulating adhesive film, E: modulus of elasticity (MPa) of the thermoconductive insulating adhesive film, CTE(A): linear expansion coefficient (° C..sup.−1) of the heat dissipating base substrate, CTE(B): linear expansion coefficient (° C..sup.−1) of the thermoconductive insulating adhesive film, CTE(C): linear expansion coefficient (° C..sup.−1) of the material of the surface of the heat generating member in contact with the thermoconductive insulating adhesive film, L(BA): initial contact length (m) between the thermoconductive insulating adhesive film and the heat dissipating base substrate, and L(BC): initial contact length (m) between the thermoconductive insulating adhesive film and the heat generating member.

A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer, in which a specified Expression (1) is satisfied in a cut surface of the copper layer obtained when the ceramic-copper composite is cut at a plane perpendicular to a main surface of the ceramic-copper composite, where S(102)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (102) plane is within 10°, S(101)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (101) plane is within 10°, S(111)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (111) plane is within 10°, and S(112)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (112) plane is within 10°.

A silicon nitride circuit board includes a silicon nitride substrate, a first copper layer over one surface of the silicon nitride substrate, and a second copper layer over the other surface of the silicon nitride substrate, in which a fracture toughness value Kc of the silicon nitride substrate is equal to or more than 5.0 MPa.Math.m.sup.0.5 and equal to or less than 10.0 MPa.Math.m.sup.0.5, and when a coefficient of linear expansion of the silicon nitride substrate is α.sub.B (/° C.), a Young's modulus of the silicon nitride substrate is E.sub.B (GPa), a coefficient of linear expansion of the first copper layer is α.sub.A (/° C.), and a coefficient of linear expansion of the second copper layer is α.sub.C (/° C.), each of a heat shock parameter HS1 and a heat shock parameter HS2 is equal to or more than 1.30 GPa and equal to or less than 2.30 GPa.

Described herein are a bonded ceramic and a manufacturing method therefor. The bonded ceramic includes: a first ceramic substrate; and a second ceramic substrate, wherein the first ceramic substrate and the second ceramic substrate are bonded to each other without an adhesive layer therebetween and include pores, each of which is formed along a bonded surface therebetween and has a size of 0.01 to 50 μm.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a Mg—N compound phase extending from a ceramic member side to a copper member side is present at a bonded interface between the copper member and the ceramic member, and at least a part of the Mg—N compound phase enters into the copper member.

A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of vanes. The first rotor disk is configured to rotate about a rotational axis. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is axially between and mounted to the first rotor disk and the second rotor disk. The vanes are arranged circumferentially around the rotational axis. The vanes include a first vane that is integral with the first rotor disk and projects axially to the second rotor disk.

Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.