Patent classifications
C04B2237/368
IN SITU SYNTHESIS, DENSIFICATION AND SHAPING OF NON-OXIDE CERAMICS BY VACUUM ADDITIVE MANUFACTURING TECHNOLOGIES
A vacuum additive manufacturing process enabling obtaining, through a single-step process, the synthesis, controlled densification and shaping of non-oxide materials as well as composite materials containing non-oxide as matrices or reinforcements, in porous as well as fully dense ceramic components, with a tailored nano-micro-macrostructure.
Method for manufacturing ceramic circuit board
According to one embodiment, a method for manufacturing a ceramic circuit board is disclosed. The ceramic circuit board includes a copper plate bonded to at least one surface of a ceramic substrate via a brazing material layer including Ag, Cu, and a reactive metal. The method includes: preparing a ceramic circuit board in which a copper plate is bonded on a ceramic substrate via a brazing material layer, and a portion of the brazing material layer is exposed between a pattern shape of the copper plate; a first chemical polishing process of chemically polishing the portion of the brazing material layer; and a first brazing material etching process of etching the chemically polished portion of the brazing material layer by using an etchant having a pH of 6 or less and including one type or two types selected from hydrogen peroxide and ammonium peroxodisulfate.
Low temperature method for hermetically joining non-diffusing ceramic materials in multi-layer plate devices
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.
COVER LID WITH SELECTIVE AND EDGE METALLIZATION
A cover lid for use with a semiconductor package is disclosed. First, a polyamide mask is applied to one surface of the lid plate. Next, the exposed areas of the surface, as well as the sides of the lid plate, are metallized. The polyamide mask can then be removed. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.
Method for manufacturing large ceramic co-fired articles
A method of forming one or more high temperature co-fired ceramic articles, comprising the steps of:— a) forming a plurality of green compacts, by a process comprising dry pressing a powder comprising ceramic and organic binder to form a green compact; b) disposing a conductor or conductor precursor to at least one surface of at least one of the plurality of green compacts to form at least one patterned green compact; c) assembling the at least one patterned green compact with one or more of the plurality of green compacts or patterned green compacts or both to form a laminated assembly; d) isostatically pressing the laminated assembly to form a pressed laminated assembly; e) firing the pressed laminated assembly at a temperature sufficient to sinter the ceramic layers together.
CERAMIC MATRIX COMPOSITE STRUCTURES WITH CONTROLLED MICROSTRUCTURES FABRICATED USING CHEMICAL VAPOR INFILTRATION (CVI)
According to a method set forth herein a plurality of preform plies having first and second preform plies can be associated together to define a preform. The preform can be subject to chemical vapor infiltration (CVI) processing to define a ceramic matrix composite (CMC) structure.
Ceramic matrix composite structures with controlled microstructures fabricated using chemical vapor infiltration (CVI)
According to a method set forth herein a plurality of preform plies having first and second preform plies can be associated together to define a preform. The preform can be subject to chemical vapor infiltration (CVI) processing to define a ceramic matrix composite (CMC) structure.
METHOD TO PROCESS A CERAMIC MATRIX COMPOSITE (CMC) WITH A PROTECTIVE CERAMIC COATING
A method of producing a ceramic matrix composite including a protective ceramic coating thereon comprises applying a surface slurry onto an outer surface of an impregnated fiber preform. The surface slurry includes particulate ceramic solids dispersed in a flowable preceramic polymer comprising silicon, and the impregnated fiber preform comprises a framework of ceramic fibers loaded with particulate matter. The flowable preceramic polymer is cured, thereby forming on the outer surface a composite layer comprising a cured preceramic polymer with the particulate ceramic solids dispersed therein. The cured preceramic polymer is then pyrolyzed to form a porous ceramic layer comprising silicon carbide, and the impregnated fiber preform and the porous ceramic layer are infiltrated with a molten material comprising silicon. After infiltration, the molten material is cooled to form a ceramic matrix composite body with a protective ceramic coating thereon.
MANUFACTURING METHOD FOR A MEMBER FOR A SEMICONDUCTOR MANUFACTURING DEVICE AND MEMBER FOR A SEMICONDUCTOR MANUFACTURING DEVICE
In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).
Bonded body, insulated circuit board with heat sink, and heat sink
An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a γ.sub.2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.