Patent classifications
C04B2237/368
Process for Producing a Metal-Ceramic Substrate, and a Metal-Ceramic Substrate Produced Using Such Method
The invention relates to a process for producing a metal-ceramic substrate (1), comprising: providing a ceramic element (10) and a metal layer, providing a gas-tight container (25) that encloses the ceramic element (10), the container (25) preferably being formed from the metal layer or comprising the metal layer, forming the metal-ceramic substrate (1) by connecting the metal layer to the ceramic element (10) by means of hot isostatic pressing, wherein, for the purpose of forming the metal-ceramic substrate (1), an active metal layer (15) or a contact layer comprising an active metal is arranged at least in some sections between the metal layer and the ceramic element (10) for supporting the connection of the metal layer to the ceramic element (10).
High optical power light conversion device using a phosphor element with solder attachment
A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.
SINTERED BODY, SUBSTRATE, CIRCUIT BOARD, AND MANUFACTURING METHOD OF SINTERED BOY
A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value ε.sub.A of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value ε.sub.B of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |ε.sub.A−ε.sub.B|≤0.1.
METHOD FOR MANUFACTURING BONDED BODY AND METHOD FOR MANUFACTURING INSULATION CIRCUIT SUBSTRATE
When a laminate of a plurality of different materials including a metal plate is bonded in a pressurized and heated state, a first pressurizing member in which a first metal foil/a carbon sheet or a ceramic sheet/a graphite sheet are laminated in this order is arranged so that the first metal foil is in contact with a surface of the first metal plate of the laminate, the first metal foil is made of a material that does not react at a contact surface of the first plate member and the first metal foil when heating, and a product of a Young's modulus (GPa) and a thickness (mm) of the first metal foil is 0.6 or more and 100 or less, so that a good bonded body can be manufactured by evenly pressurizing the laminate and foreign substances can be restrained from adhering to the surface of the laminate.
Surface-coated cutting tool
A surface-coated cutting tool including a tool substrate containing WC crystal grains and insulating grains, and a coating layer composed of a multiple nitride of Ti, Al, and V and disposed on the surface of the tool substrate. The multiple nitride is represented by a compositional formula: Ti.sub.aAl.sub.bV.sub.cN satisfying the following relations:
0.25≤a≤0.35,
0.64≤b≤0.74,
0<c≤0.06, and
a+b+c=1
wherein each of a, b, and c represents an atomic proportion. The coating layer is characterized by exhibiting a peak attributed to a hexagonal crystal phase and a peak attributed to a cubic crystal phase as observed through X-ray diffractometry.
GLASS
The present invention relates to a glass including, represented by mole percent based on oxides: from 52% to 80% of SiO.sub.2; from 5% to 30% of B.sub.2O.sub.3; from 2% to 30% of Al.sub.2O.sub.3; from 0.1% to 11% of P.sub.2O.sub.5; and from 0.0001% to 5% of Na.sub.2O, in which the glass has an average thermal expansion coefficient α at from 50° C. to 350° C. of from 5×10.sup.−7/° C. or more and 33×10.sup.−7/° C. or less.
Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
Ceramic device
The invention provides a ceramic device enabling more complex, elaborate patterns for resistance heating elements or electrodes. A ceramic device includes a ceramic substrate consisting of a ceramic sintered body and including at least a base layer, an intermediate layer laminated over the base layer, and an overlayer laminated over the intermediate layer; and an electrifiable resistance heating element or electrode having a predetermined pattern extending in a planar shape and being embedded in the ceramic substrate. A horizontal surface is defined in the upper surface of the intermediate layer, along which the resistance heating element or electrode is arranged, and the overlayer is laminated onto the upper surface of the intermediate layer to cover the resistance heating element or electrode.
MULTI-LAYER COMPOSITE CERAMIC PLATE AND MANUFACTURING METHOD THEREOF
Disclosed are a multi-layer composite ceramic plate and a manufacturing method thereof. The composite ceramic plate includes at least one basic sandwich structure. The manufacturing method includes: preparing a sheet-like green body with ceramic powders; pre-sintering the green body at a pre-sintering temperature lower than the sintering temperature to obtain a pre-sintered ceramic member with certain strength; forming a metal electrode layer on an upper surface of the pre-sintered ceramic member; placing the pre-sintered ceramic member in a mold, with the upper surface coated with the metal electrode layer facing upwards; providing a ceramic precursor layer on the upper surface of the pre-sintered ceramic member; carrying out hot-pressing sintering in the axial direction of the pre-sintered ceramic member at the sintering temperature to form an integral structure, wherein by the hot-pressing sintering, a second ceramic layer is formed by the pre-sintered ceramic member, a first ceramic layer is formed by the ceramic precursor layer, and the metal electrode layer is located between the first ceramic layer and the second ceramic layer to from a basic sandwich structure together with the first ceramic layer and the second ceramic layer.
BONDED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.