A method for joining engine components includes positioning a first plurality of thermal protection structures across a thermal protection space between a first thermal protection surface and a second thermal protection surface. The first and second engine components are locally joined by forming a first plurality of transient liquid phase (TLP) or partial transient liquid phase (PTLP) bonds along corresponding ones of the first plurality of thermal protection structures between the first thermal protection surface and the second thermal protection surface. The second thermal protection surface is formed from a second surface material different from a first surface material of the first thermal protection surface.

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A metal-on-ceramic substrate comprises a ceramic layer, a first metal layer, and a bonding layer joining the ceramic layer to the first metal layer. The bonding layer includes thermoplastic polyimide adhesive that contains thermally conductive particles. This permits the substrate to withstand most common die attach operations, reduces residual stress in the substrate, and simplifies manufacturing processes.

Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 m or more, a maximum height Rz of 10.0 m or less, and Rz.sub.JIS roughness of 7.0 m or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).

A manufacturing method for a three-dimensional formed object for manufacturing the three-dimensional formed object by stacking layers includes supplying a first supply object including a first material to a supporting body and sintering the first material to thereby solidify the first material to form a first layer and supplying a second supply object including a second material having a melting point or a sintering temperature lower than a sintering temperature of the first material to be superimposed on the first layer and sintering or melting the second material to thereby solidify the second material to form a second layer.

A method for joining engine components includes positioning a first plurality of thermal protection structures across a thermal protection space between a first thermal protection surface and a second thermal protection surface. The first and second engine components are locally joined by forming a first plurality of transient liquid phase (TLP) or partial transient liquid phase (PTLP) bonds along corresponding ones of the first plurality of thermal protection structures between the first thermal protection surface and the second thermal protection surface. The second thermal protection surface is formed from a second surface material different from a first surface material of the first thermal protection surface.

A method for producing a joined solid, the method comprising placing a metal powder on a solid; covering at least a portion of the periphery of the metal powder with a high-melting-point material having a melting point higher than the melting point of the metal powder; and irradiating the metal powder, at least a portion of the periphery of which is covered with the high-melting-point material, with microwaves to heat the metal powder, thereby sintering or melt-solidifying the metal powder to form a metal solid on the solid.

A joining layer of a joined body includes a joining material which contains, as a main component, a metal having a surface tension of 1000 mN/m or less at its melting point, and a metal layer which has a plurality of pores formed therein and in which at least some of the pores are impregnated with the joining material.

Provided is a method for producing a metal solid, the method being capable of easily producing a metal solid. A method for producing a metal solid, the method comprising covering at least a portion of the periphery of a metal powder with a high-melting-point material having a melting point higher than the melting point of the metal powder; and irradiating the metal powder, at least a portion of the periphery of which is covered with the high-melting-point material, with microwaves to heat the metal powder, thereby sintering or melt-solidifying the metal powder.

A member for semiconductor manufacturing device includes a susceptor which is a ceramic plate formed of AlN and a gas introduction pipe which is joined to the susceptor. An annular pipe joining bank is provided at a position of the susceptor facing a flange of the gas introduction pipe. In addition, a pipe brazed part is formed between the flange and the pipe joining bank. The flange has a width of 3 mm or more and a thickness of from 0.5 to 2 mm. It is preferable that the height of the pipe joining bank be 0.5 mm or more, the edge of the bank facing the outer edge of the flange. be chamfered as designated by C0.3 or more or rounded as designated by R0.3 or more.