Provided are ionic thermal acid generators of the following general formula (I): ##STR00001##
wherein: Ar.sup.1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

The invention discloses a method for the preparation of potassium 5-iodo-2-carboxybenzene sulfonate by diazotization of 5-amino-2-carboxybenzene sulfonate and subsequent reaction with KI.

The invention discloses a method for the preparation of potassium 5-iodo-2-carboxybenzene sulfonate by diazotization of 5-amino-2-carboxybenzene sulfonate and subsequent reaction with KI.

The invention relates to a method for preparing a compound comprising two phenyl groups by reacting a bisfuranic compound with a dienophile; and to such compounds.

The invention relates to a method for preparing a compound comprising two phenyl groups by reacting a bisfuranic compound with a dienophile; and to such compounds.

The invention relates to a method for preparing a compound comprising two phenyl groups by reacting a bisfuranic compound with a dienophile; and to such compounds.

Disclosed are a salt represented by formula (I), an acid generator, a resin and a resist composition:

##STR00001##

wherein R.sup.1 represents a halogen atom, a cyano group, a nitro group, a haloalkyl group or a hydrocarbon group; m1 represents an integer of 0 to 4; X.sup.1 represents *COO, *OCO, etc.; L.sup.1 and L.sup.2 each represent a single bond or a substituted/unsubstituted hydrocarbon group; Ar represents a substituted/unsubstituted aromatic hydrocarbon group; X.sup.0 represents a single bond, *O**, *COO**, *OCOO**, etc., in which when L.sup.2 is a single bond, X.sup.0 is not a single bond; R.sup.5 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; and ZI.sup.+ represents an organic cation.

Disclosed are a salt represented by formula (I), an acid generator, a resin and a resist composition:

##STR00001##

wherein R.sup.1 represents a halogen atom, a cyano group, a nitro group, a haloalkyl group or a hydrocarbon group; m1 represents an integer of 0 to 4; X.sup.1 represents *COO, *OCO, etc.; L.sup.1 and L.sup.2 each represent a single bond or a substituted/unsubstituted hydrocarbon group; Ar represents a substituted/unsubstituted aromatic hydrocarbon group; X.sup.0 represents a single bond, *O**, *COO**, *OCOO**, etc., in which when L.sup.2 is a single bond, X.sup.0 is not a single bond; R.sup.5 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; and ZI.sup.+ represents an organic cation.

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.