Patent classifications
C07D221/14
FUSED RING DIIMIDE DERIVATIVE, PREPARATION METHOD AND USE THEREOF
Provided is a fused ring diimide derivative having a chemical structure of formula I. Further provided is a preparation method therefor. The fused ring diimide derivative has excellent anti-tumor activity, and the anti-proliferative activity on various cancer cells is significantly better than that of similar compounds.
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METHODS FOR MAKING DIMERIC NAPHTHALIMIDES AND SOLID STATE FORMS OF THE SAME
The present disclosure provides methods of preparing Compound of Formula (I), solid state forms of the same and compositions comprising the same. Also disclosed herein are methods of preparing a diacetate salt of Compound of Formula (I) and pharmaceutical compositions comprising the same.
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METHODS FOR MAKING DIMERIC NAPHTHALIMIDES AND SOLID STATE FORMS OF THE SAME
The present disclosure provides methods of preparing Compound of Formula (I), solid state forms of the same and compositions comprising the same. Also disclosed herein are methods of preparing a diacetate salt of Compound of Formula (I) and pharmaceutical compositions comprising the same.
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CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD FOR PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD FOR PATTERNED RESIST FILM, COMPOUND, PHOTO-ACID GENERATOR, AND PRODUCTION METHOD FOR N-ORGANOSULFONYLOXY COMPOUND
A chemically amplified positive-type photosensitive resin composition in which the acid generator included has excellent solubility in a solvent and with which a resist pattern having excellent mask linearity is easily formed; a photosensitive dry film having a photosensitive layer formed from the composition; a method of manufacturing the photosensitive dry film; a method of manufacturing a patterned resist film using the composition; and a compound and an acid generator which can be added to the composition. The composition includes an acid generator which generates acid when irradiated with an active ray or radiation, and a resin whose solubility in alkali increases under action of an acid.
CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD FOR PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD FOR PATTERNED RESIST FILM, COMPOUND, PHOTO-ACID GENERATOR, AND PRODUCTION METHOD FOR N-ORGANOSULFONYLOXY COMPOUND
A chemically amplified positive-type photosensitive resin composition in which the acid generator included has excellent solubility in a solvent and with which a resist pattern having excellent mask linearity is easily formed; a photosensitive dry film having a photosensitive layer formed from the composition; a method of manufacturing the photosensitive dry film; a method of manufacturing a patterned resist film using the composition; and a compound and an acid generator which can be added to the composition. The composition includes an acid generator which generates acid when irradiated with an active ray or radiation, and a resin whose solubility in alkali increases under action of an acid.
THERMAL ACID GENERATOR AND RESIST COMPOSITION USING SAME
A thermal acid generator having a high acid generation temperature, and a resist composition using the same. The thermal acid generator is a sulfonic acid derivative compound represented by the following Formula (I): (wherein, R.sup.1 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms or the like, or a group represented by the following Formula (II): (wherein, Y.sup.1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms; R.sup.11 and R.sup.12 each independently represent an alkanediyl group having 2 to 6 carbon atoms, or the like; R.sup.13 represents a linear or branched alkyl group having 1 to 18 carbon atoms, or the like; a and b each represent 0 or 1; and either a or b is 1); R.sup.2 to R.sup.7 each independently represent a linear or branched alkyl group having 1 to 14 carbon atoms; the aliphatic hydrocarbon group or the like of R.sup.1 has no substituent or is substituted with a halogen atom or the like; and a methylene structure in the aliphatic hydrocarbon group or the like of R.sup.1 is optionally substituted with —O— or the like).
##STR00001##
THERMAL ACID GENERATOR AND RESIST COMPOSITION USING SAME
A thermal acid generator having a high acid generation temperature, and a resist composition using the same. The thermal acid generator is a sulfonic acid derivative compound represented by the following Formula (I): (wherein, R.sup.1 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms or the like, or a group represented by the following Formula (II): (wherein, Y.sup.1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms; R.sup.11 and R.sup.12 each independently represent an alkanediyl group having 2 to 6 carbon atoms, or the like; R.sup.13 represents a linear or branched alkyl group having 1 to 18 carbon atoms, or the like; a and b each represent 0 or 1; and either a or b is 1); R.sup.2 to R.sup.7 each independently represent a linear or branched alkyl group having 1 to 14 carbon atoms; the aliphatic hydrocarbon group or the like of R.sup.1 has no substituent or is substituted with a halogen atom or the like; and a methylene structure in the aliphatic hydrocarbon group or the like of R.sup.1 is optionally substituted with —O— or the like).
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POLYMERS FOR USE IN ELECTRONIC DEVICES
Disclosed is a dianhydride having Formula I, and diamines having Formula IV and Formula VII
##STR00001##
In the formulas: Y is alkyl, silyl, ester, siloxane, oligosiloxane, polysiloxane, O, S, SO.sub.2, BR.sup.3, NR.sup.3, P(O)R.sup.3, unsubstituted or substituted carbocyclic aryl, or unsubstituted or substituted heteroaryl and deuterated analogs thereof; Ar.sup.2-Ar.sup.4 are the same or different and are carbocyclic aryl, heteroaryl, or substituted derivatives thereof; Q.sup.1 is a single bond, alkyl, silyl, ester, siloxane, oligosiloxane, polysiloxane, O, S, SO.sub.2, BR.sup.3, NR.sup.3, P(O)R.sup.3, unsubstituted or substituted carbocyclic aryl, or unsubstituted or substituted heteroaryl and deuterated analogs thereof; R.sup.1-R.sup.2 are the same or different at each occurrence and are F, CN, deuterium, alkyl, fluoroalkyl, unsubstituted or substituted carbocyclic aryl, unsubstituted or substituted heteroaryl, alkoxy, fluoroalkoxy, unsubstituted or substituted aryloxy, silyl, siloxy and deuterated analogs thereof; R.sup.3 is alkyl or unsubstituted or substituted carbocyclic aryl; a and b are the same or different and are an integer from 0-5; and c is 0 or 1.
POLYMERS FOR USE IN ELECTRONIC DEVICES
Disclosed is a dianhydride having Formula I, and diamines having Formula IV and Formula VII
##STR00001##
In the formulas: Y is alkyl, silyl, ester, siloxane, oligosiloxane, polysiloxane, O, S, SO.sub.2, BR.sup.3, NR.sup.3, P(O)R.sup.3, unsubstituted or substituted carbocyclic aryl, or unsubstituted or substituted heteroaryl and deuterated analogs thereof; Ar.sup.2-Ar.sup.4 are the same or different and are carbocyclic aryl, heteroaryl, or substituted derivatives thereof; Q.sup.1 is a single bond, alkyl, silyl, ester, siloxane, oligosiloxane, polysiloxane, O, S, SO.sub.2, BR.sup.3, NR.sup.3, P(O)R.sup.3, unsubstituted or substituted carbocyclic aryl, or unsubstituted or substituted heteroaryl and deuterated analogs thereof; R.sup.1-R.sup.2 are the same or different at each occurrence and are F, CN, deuterium, alkyl, fluoroalkyl, unsubstituted or substituted carbocyclic aryl, unsubstituted or substituted heteroaryl, alkoxy, fluoroalkoxy, unsubstituted or substituted aryloxy, silyl, siloxy and deuterated analogs thereof; R.sup.3 is alkyl or unsubstituted or substituted carbocyclic aryl; a and b are the same or different and are an integer from 0-5; and c is 0 or 1.
PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
Disclosed herein is a method comprising forming a radiation-sensitive film on a substrate; wherein the radiation-sensitive film comprises a radiation-sensitive composition comprising a photoacid generator; a quencher; an acid labile polymer formed from monomers comprising a vinyl aromatic monomer and a monomer comprising an acid decomposable group; and a solvent; patternwise exposing the radiation-sensitive film to activating radiation; and contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern.