C07F7/0805

NON-AQUEOUS ELECTROLYTE LIQUID AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY CONTAINING THE SAME

A non-aqueous electrolyte liquid including: a non-aqueous solvent; an electrolyte salt dissolved in the non-aqueous solvent; and a silane compound represented by the following general formula (1),

[00001] Si ( R 1 ) l ( R 2 ) m ( R 3 ) n ( R 4 ) 4 - l - m - n ( 1 ) wherein R represents an alkenyl group having 2 to 20 carbon atoms, R.sup.2 represents a substituted or unsubstituted arylethynyl group having 8 to 20 carbon atoms, R.sup.3 represents an alkyl group having 1 to 20 carbon atoms, R.sup.4 represents an alkynyl group having 2 to 20 carbon atoms, l and m each independently represent an integer of 1 to 3, n represents an integer of 0 to 2, and l, m, and n represent integers satisfying 2l+m+n4.

COMPOUND, OPTICAL ABSORBING MATERIAL, NON-LINEAR OPTICAL ABSORBING MATERIAL, RECORDING MEDIUM, INFORMATION RECORDING METHOD, AND INFORMATION READING METHOD
20240363144 · 2024-10-31 ·

A compound is represented by Formula (1) below,

##STR00001##

in Formula (1) above, R.sup.1 to R.sup.22 each independently contain at least one atom selected from the group consisting of H, B, C, N, O, F, Si, P, S, Cl, I, and Br, and L.sup.1 and L.sup.2 each independently represent a single bond or CC.

Process and apparatus for preparation of polysilanes

The invention relates to a process for preparing polysilanes by converting monosilane in the presence of hydrogen in a plasma, and to a plant for performing the process.

Cold flow reduced polymers with good processing behaviour

Cold flow-reduced polymers having good processing characteristics have, at the ends of the polymer chains, a silane-containing carboxyl group of the formula (I) ##STR00001##
where R.sup.1 and R.sup.2 are the same or different and are each an H, alkyl, alkoxy, cycloalkyl, cycloalkoxy, aryl, aryloxy, alkaryl, alkaryloxy, aralkyl or aralkoxy; R.sup.3 and R.sup.4 are the same or different and are each an H, alkyl, cycloalkyl, aryl, alkaryl or aralkyl radical; A is a divalent organic radical.

COMPOUND AND ORGANIC ELECTRONIC DEVICE COMPRISING SAME
20180123042 · 2018-05-03 · ·

The present specification relates to a compound and an organic electronic device including the same.

Organic electric-field light-emitting element, light-emitting material for organic electric-field light-emitting element, and light-emitting device, display device, and illumination device using same element

An organic electroluminescent element that uses a compound expressed by the following general formula emits dark blue light and exhibits little change in chromaticity during brightness modulation. (n1 is an integer from 0 to 8; the R.sup.1 [groups] are each independently a substituent substituted for a hydrogen atom of the pyrene skeleton; X is CR.sup.aR.sup.b (R.sup.a and R.sup.b are each independently a hydrogen atom or a substituent), O, S, or SiR.sup.dR.sup.e (R.sup.d and R.sup.e are each independently a hydrogen atom or a substituent); and A.sup.1 to A.sup.4 represent each independently either N or CR.sup.f (R.sup.f represents a hydrogen atom or a substituent, and two adjacent R.sup.f [groups] may jointly form a saturated or unsaturated ring, but no more than two rings may be formed jointly by two or more of the R.sup.f [groups]).)

Compounds that are S1P modulating agents and/or ATX modulating agents

Compounds of formula (I) can modulate the activity of one or more SIP receptors and/or the activity of autotaxin (ATX). ##STR00001##

Process for preparing substituted pentacenes

The invention relates to a process of preparing substituted pentacenes, to novel pentacenes prepared by this process, to the use of the novel pentacenes as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, and to FETs and other semiconducting components or materials comprising the novel pentacenes.

Etching composition

Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME

A salt represented by formula (I):

##STR00001##

wherein Q.sup.1 and Q.sup.2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group,
R.sup.1 and R.sup.2 independently each represent a hydrogen atom, a fluorine atom or a C1-C6 perfluoroalkyl group,
z represents an integer of 0 to 6,
X.sup.1 represents *C(O)O, *OC(O), *OC(O)O or O, where * represents a binding site to C(R.sup.1)(R.sup.2) or C(Q.sup.1)(Q.sup.2)-,
A.sup.1 represents a C2-C36 divalent hydrocarbon group in which a methylene group can be replaced by an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group and in which a hydrogen atom can be replaced by a substituent,
R.sup.3 represents a hydrogen atom or a methyl group, and
Z.sup.+ represents an organic cation.