Provided is a carbonate-containing silane compound having a characteristic structure that at least two silicon atoms are linked by a carbon chain. The silane compound is chemically stable. When used as an additive to a nonaqueous electrolyte solution, the silane compound does not jeopardize the safety of lithium ion secondary batteries.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about 20 C. to about 400 C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Disclosed herein are electrolyte compositions comprising a fluorinated solvent, at least one silyl oxalate represented by the formulas RRSi(C.sub.2O.sub.4), wherein R and R are each the same or different from each other and independently selected from C.sub.1-C.sub.8 alkyl, C.sub.2-C.sub.8 alkenyl, C.sub.2-C.sub.8 alkynyl, or C.sub.6-C.sub.10 aryl radical, optionally comprising at least one substituent selected from halogen, hydroxyl, alkoxy, carbonyl, and carboxyl groups; and LiPF6. Also disclosed herein are electrolyte compositions comprising a fluorinated solvent and a lithium oxalato phosphate salt represented by the formula LiPF.sub.(6-2q)(C.sub.2O.sub.4).sub.q, wherein q is 1, 2 or 3; wherein the oxalato phosphate salt comprises at least a portion that is derived from at least one silyl oxalate as defined herein. The electrolyte compositions are useful in electrochemical cells, such as lithium ion batteries.

An object of the invention is to provide a method for efficiently producing an acyloxysilane which is useful as a functional chemical, an acyloxysilane obtained thereby, and the use thereof. The present invention provides: a method for producing an acyloxysilane, including a reaction step of reacting an alkoxysilane with a carboxylic anhydride in the presence of a catalyst, wherein the alkoxysilane is a specified alkoxysilane represented by General Formula (I), the carboxylic anhydride is a specified carboxylic acid represented by General Formula (IIA) or (IIB), the catalyst is an acid catalyst, and an acyloxysilane obtained in the reaction step is a specified acyloxysilane represented by General Formula (IIIA) or (IIIB); and the use of the acyloxysilane as a surface treatment agent or the like.

Organosilicon quaternary ammonium compounds, their formulations, including powdered and solid formulations, and methods of use to treat infections in humans and animals.

Organosilicon quaternary ammonium compounds, their formulations, including powdered and solid formulations, and methods of use to treat infections in humans and animals.

The present invention provides, as a novel compound that can be utilized for efficient synthesis or the like of a polypeptide comprising various amino acids, a silane-containing condensed cyclic dipeptide compound represented by formula (A).

##STR00001##

In formula (A), each of R.sup.11, R.sup.12, R.sup.13, R.sup.21, and R.sup.22 independently represents a hydrogen atom, a halogen atom, a hydroxyl group, a carboxyl group, a nitro group, a cyano group, or a thiol group, or a monovalent aliphatic hydrocarbon group, aromatic hydrocarbon group, or heterocyclic group that may have one or more substituents; and each of R.sup.a1 and R.sup.a2 independently represents a monovalent aliphatic hydrocarbon group or aromatic hydrocarbon group that may have one or more substituents

A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD. ##STR00001##

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about 20 C. to about 100 C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.