A continuous process for filtering a suspension of 2-acrylamido-2-methylpropane sulfonic acid crystals by means of a rotary pressure filter equipped with a drum, a surface of which is provided with cells covered with a filter medium, the drum rotating within a fixed concentric cylinder comprising at least three zones sealed from each other, respectively a filtration zone, a washing zone and a discharge zone, each zone opening onto the cells.

A continuous process for filtering a suspension of 2-acrylamido-2-methylpropane sulfonic acid crystals by means of a rotary pressure filter equipped with a drum, a surface of which is provided with cells covered with a filter medium, the drum rotating within a fixed concentric cylinder comprising at least three zones sealed from each other, respectively a filtration zone, a washing zone and a discharge zone, each zone opening onto the cells.

A polymer compound having a weight average molecular weight in the range of 1,000 to 500,000, and contains one or more repeating units represented by formula (1) and one or more repeating units represented by formula (2): ##STR00001## R.sup.1 represents a hydrogen atom or a methyl group; Rf.sub.1 represents a linear or branched alkyl group having 1 to 4 carbon atoms or a phenyl group, and has at least one fluorine atom or a trifluoromethyl group in Rf.sub.1; Z.sub.1 represents a single bond, an arylene group having 6 to 12 carbon atoms or —C(═O)—O—R.sup.2—; R.sup.2 represents a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 10 carbon atoms or an alkenylene group having 2 to 10 carbon atoms, and may have an ether group, a carbonyl group or an ester group in R.sup.2; and “a” is 0<a≤1.0, and ##STR00002## “b” is 0<b<1.0.

A polymer compound having a weight average molecular weight in the range of 1,000 to 500,000, and contains one or more repeating units represented by formula (1) and one or more repeating units represented by formula (2): ##STR00001## R.sup.1 represents a hydrogen atom or a methyl group; Rf.sub.1 represents a linear or branched alkyl group having 1 to 4 carbon atoms or a phenyl group, and has at least one fluorine atom or a trifluoromethyl group in Rf.sub.1; Z.sub.1 represents a single bond, an arylene group having 6 to 12 carbon atoms or —C(═O)—O—R.sup.2—; R.sup.2 represents a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 10 carbon atoms or an alkenylene group having 2 to 10 carbon atoms, and may have an ether group, a carbonyl group or an ester group in R.sup.2; and “a” is 0<a≤1.0, and ##STR00002## “b” is 0<b<1.0.

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film. ##STR00001##

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film. ##STR00001##

An actinic ray-sensitive or radiation-sensitive resin composition containing (A) an acid-decomposable resin, (B) a compound represented by General Formula (b1), and (C) a compound represented by General Formula (c1), in which a ratio of a content of the compound (C) to a content of the compound (B) is from 0.01% by mass to 10% by mass. In the formulae, L represents a single bond or a divalent linking group. A represents a group that decomposes by the action of an acid. B represents a group that decomposes by the action of an acid, a hydroxy group, or a carboxy group. It should be noted that at least one B represents the hydroxy group or the carboxy group. n represents an integer from 1 to 5. X represents an (n+1)-valent linking group. M.sup.+ represents a sulfonium ion or an iodonium ion.

##STR00001##

The present invention relates to a hydrated crystalline form of 2-acrylamido-2-methylpropane sulfonic acid having a 2-theta powder X-ray diffraction diagram comprising peaks at 10.58°, 11.2°, 12.65°, 13.66°, 16.28°, 18.45°, 20°, 20.4°, 22.5°, 25.5°, 25.88°, 26.47°, 28.52°, 30.28°, 30.8°, 34.09°, 38.19°, 40.69°, 41.82°, 43.74°, 46.04° degrees (+/− 0.1°. The present invention also relates to a production method for this form of 2-acrylamido-2-methylpropane sulfonic acid and a preparation method for an aqueous solution A of a salt of this form of 2-acrylamido-2-methylpropane sulfonic acid, and the (co)polymer of this form of -acrylamido-2-methylpropane sulfonic acid.

The present invention relates to a hydrated crystalline form of 2-acrylamido-2-methylpropane sulfonic acid having a 2-theta powder X-ray diffraction diagram comprising peaks at 10.58°, 11.2°, 12.65°, 13.66°, 16.28°, 18.45°, 20°, 20.4°, 22.5°, 25.5°, 25.88°, 26.47°, 28.52°, 30.28°, 30.8°, 34.09°, 38.19°, 40.69°, 41.82°, 43.74°, 46.04° degrees (+/− 0.1°. The present invention also relates to a production method for this form of 2-acrylamido-2-methylpropane sulfonic acid and a preparation method for an aqueous solution A of a salt of this form of 2-acrylamido-2-methylpropane sulfonic acid, and the (co)polymer of this form of -acrylamido-2-methylpropane sulfonic acid.

A curable composition can comprise a polymerizable material and a photo-initiator, wherein the polymerizable material can comprise a first monomer including at least one bismaleimide-monomer and at least one second monomer. The curable composition can have a viscosity of not greater than 30 mPa.Math.s, and a cured layer of the curable composition can have a high thermal stability up to 350° C.