The present invention provides a positive tone resist composition containing (A) an ionic compound and (B) a resin that has a repeating unit (b1) having an interactive group which interacts with an ionic group in the ionic compound and of which a main chain is decomposed by an irradiation with X-rays, electron beam, or extreme ultraviolet rays; a resist film formed of the positive tone resist composition; a pattern forming method; and a method for manufacturing an electronic device.

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): ##STR00001##
wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R.sub.1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R.sub.2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): ##STR00001##
wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R.sub.1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R.sub.2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Hydrocarbon swelling particles for wellbore cementing include a crosslinked polymer comprising vinyl aromatic monomer and/or (meth)acrylic monomer.

Hydrocarbon swelling particles for wellbore cementing include a crosslinked polymer comprising vinyl aromatic monomer and/or (meth)acrylic monomer.

The present disclosure relates to a styrene copolymer, a thermoplastic resin composition, and methods of preparing the styrene copolymer and the thermoplastic resin composition. More particularly, the present disclosure relates to a styrene copolymer having a low residual oligomer content and excellent transparency due to uniform polymerization of components to be added; and a thermoplastic resin composition including the styrene copolymer and an acrylic rubber graft copolymer and being suitable for a molded article having excellent heat resistance, scratch resistance, and surface appearance.

The present disclosure relates to a styrene copolymer, a thermoplastic resin composition, and methods of preparing the styrene copolymer and the thermoplastic resin composition. More particularly, the present disclosure relates to a styrene copolymer having a low residual oligomer content and excellent transparency due to uniform polymerization of components to be added; and a thermoplastic resin composition including the styrene copolymer and an acrylic rubber graft copolymer and being suitable for a molded article having excellent heat resistance, scratch resistance, and surface appearance.

The present disclosure relates to a styrene copolymer, a thermoplastic resin composition, and methods of preparing the styrene copolymer and the thermoplastic resin composition. More particularly, the present disclosure relates to a styrene copolymer having a low residual oligomer content and excellent transparency due to uniform polymerization of components to be added; and a thermoplastic resin composition including the styrene copolymer and an acrylic rubber graft copolymer and being suitable for a molded article having excellent heat resistance, scratch resistance, and surface appearance.

A maleimide based copolymer, manufacturing method thereof, and a resin composition using the maleimide based copolymer is provided. The maleimide based copolymer includes 40 to 60 mass % of aromatic vinyl monomer unit, 5 to 20 mass % of vinyl cyanide monomer unit, 35 to 50 mass % of maleimide monomer unit, and 0 to 10 mass % of monomer copolymerizable with these monomer units. The maleimide based copolymer has a glass transition temperature of 165° C. or higher and a melt mass flow rate of 25 to 80 g/10 min measured at 265° C. with 98 N load. By using such maleimide based copolymer, flowability can be improved without decreasing heat resistance providing ability.

A maleimide based copolymer, manufacturing method thereof, and a resin composition using the maleimide based copolymer is provided. The maleimide based copolymer includes 40 to 60 mass % of aromatic vinyl monomer unit, 5 to 20 mass % of vinyl cyanide monomer unit, 35 to 50 mass % of maleimide monomer unit, and 0 to 10 mass % of monomer copolymerizable with these monomer units. The maleimide based copolymer has a glass transition temperature of 165° C. or higher and a melt mass flow rate of 25 to 80 g/10 min measured at 265° C. with 98 N load. By using such maleimide based copolymer, flowability can be improved without decreasing heat resistance providing ability.