A thermoplastic resin composition includes a rubber-reinforced styrenic thermoplastic resin (A1) in an amount of 97 to 80 parts by mass); and a hitting sound reducing material (B) in an amount of 3 to 20 parts by mass. The hitting sound reducing material (B) is a hydrogenated copolymer derived from hydrogenation of a copolymer formed of a block portion (I) primarily including structural units derived from an aromatic vinyl-based compound, and a random portion (II) primarily including structural units derived from an aromatic vinyl-based compound and primarily including structural units derived from butadiene. The structural units in the block portion (I) and the structural units derived from an aromatic vinyl-based compound in the random portion (II) are present in 55 to 80 mass % relative to a 100 total mass % of the copolymer, and the hydrogenated copolymer has a primary dispersion peak of tan δ at 0° C. or greater.

A thermoplastic resin composition includes a rubber-reinforced styrenic thermoplastic resin (A1) in an amount of 97 to 80 parts by mass); and a hitting sound reducing material (B) in an amount of 3 to 20 parts by mass. The hitting sound reducing material (B) is a hydrogenated copolymer derived from hydrogenation of a copolymer formed of a block portion (I) primarily including structural units derived from an aromatic vinyl-based compound, and a random portion (II) primarily including structural units derived from an aromatic vinyl-based compound and primarily including structural units derived from butadiene. The structural units in the block portion (I) and the structural units derived from an aromatic vinyl-based compound in the random portion (II) are present in 55 to 80 mass % relative to a 100 total mass % of the copolymer, and the hydrogenated copolymer has a primary dispersion peak of tan δ at 0° C. or greater.

An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer.

Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.

The pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a washing step of washing an outer peripheral portion of the substrate with a washing solution including an organic solvent while rotating the substrate on which the resist film is formed, an exposing step of exposing the resist film, a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including an ion pair which is decomposed by an irradiation with an actinic ray or a radiation, and a solvent, and all of expressions (1) to (4) are satisfied.

An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer.

Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.

The pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a washing step of washing an outer peripheral portion of the substrate with a washing solution including an organic solvent while rotating the substrate on which the resist film is formed, an exposing step of exposing the resist film, a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including an ion pair which is decomposed by an irradiation with an actinic ray or a radiation, and a solvent, and all of expressions (1) to (4) are satisfied.

An ink contains water, a pigment, and a polymer having a structure unit represented by the following Chemical structure 1, ##STR00001## where R.sub.1 represents an organic group having at least carbon and oxygen.

An ink contains water, a pigment, and a polymer having a structure unit represented by the following Chemical structure 1, ##STR00001## where R.sub.1 represents an organic group having at least carbon and oxygen.

There is provided a polymer which is the copolymerization product from a mixture including: (a) 10-50 mol % of at least one addition polymerizable arylcyclobutene monomer; (b) 15-50 mol % of at least one addition polymerizable diene monomer; and (c) 15-60 mol % of at least one addition polymerizable aromatic vinyl monomer. The polymer can be used in electronic applications.

There is provided a polymer which is the copolymerization product from a mixture including: (a) 10-50 mol % of at least one addition polymerizable arylcyclobutene monomer; (b) 15-50 mol % of at least one addition polymerizable diene monomer; and (c) 15-60 mol % of at least one addition polymerizable aromatic vinyl monomer. The polymer can be used in electronic applications.

There is provided a polymer which is the copolymerization product from a mixture including: (a) 10-50 mol % of at least one addition polymerizable arylcyclobutene monomer; (b) 15-50 mol % of at least one addition polymerizable diene monomer; and (c) 15-60 mol % of at least one addition polymerizable aromatic vinyl monomer. The polymer can be used in electronic applications.

An anion exchange membrane is composed of a copolymer of 1,1-diphenylethylene and one or more styrene monomers, such as 4-tert-butylstyrene. The copolymer includes a backbone substituted with a plurality of ionic groups coupled to phenyl groups on the backbone via hydrocarbyl tethers between about 1 and about 7 carbons in length. High-temperature conditions enabled by these copolymers enhance conductivity performance, making them particularly suitable for use in anion exchange membranes in fuel cells, electrolyzers employing hydrogen, ion separations, etc. The properties of the membranes can be tuned via the degree of functionalization of the phenyl groups and selection of the functional groups, such as quaternary ammonium groups. Several processes can be used to incorporate the desired ionic functional groups into the polymers, such as chloromethylation, radical bromination, Friedel-Crafts acylation and alkylation, sulfonation followed by amination, or combinations thereof.