C08F212/16

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Disclosed is a resin comprising a structural unit derived from a compound represented by formula (I) and a structural unit having an acid-labile group:

##STR00001## ##STR00002##

wherein R.sup.1 represents a hydrocarbon group which may have a substituent, R.sup.2 each independently represent an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom, Ar represents an aromatic hydrocarbon group which may have a substituent, L.sup.1 represents a group represented by formula (L.sup.1-1), etc., L.sup.11, L.sup.13, L.sup.15 and L.sup.17 each independently represent an alkanediyl group, L.sup.12, L.sup.14, L.sup.16 and L.sup.18 each independently represent O, CO, COO, etc., * and ** are bonds, and ** represents a bond to an iodine atom.

ANTIREFLECTIVE FILM, METHOD OF PRODUCING ANTIREFLECTIVE FILM, AND EYEGLASS TYPE DISPLAY
20190187342 · 2019-06-20 · ·

The present invention is an antireflective film, including: a support base, and a pattern composed of a photoresist material formed on the support base, the pattern having a larger size at a point closer to the support base. The present invention provides an antireflective film that is able to give antireflection effect to decrease the reflection of light, a method of producing the same, and an eyeglass type display.

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and/or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.

MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

A monomer having formula (A) is provided. R.sup.A is H, methyl or trifluoromethyl, X.sup.1 is a single bond, ether, ester or amide bond, R.sup.a is a C.sub.1-C.sub.20 monovalent hydrocarbon group, R.sup.b is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1n+m4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV.

##STR00001##

Radiopaque polymers

A liquid composition comprising a polymer having pendant groups of the formula I: (I) Wherein X is either a bond or is a linking group having 1 to 8 carbons and optionally 1 to 4 heteroatoms selected from O, N and S; and n is 1 to 4. ##STR00001##

Conductive polymer composition, substrate, and method for producing substrate

An object is to obtain a conductive polymer composition having favorable filterability and film formability, and being capable of relieving acidity, forming a conductive film with high transparency, and imparting leveling property on a substrate, the composition being applicable in droplet-coating methods, such as spray coating and inkjet printing. The conductive polymer composition contains: a composite containing a -conjugated polymer (A) and a polymer (B) shown by the following general formula (1); H.sub.2O (D) for dispersing the composite; and a water-soluble organic solvent (C). ##STR00001##