A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequester metals in nanoparticulate form, and as a way for shaping human hair in hairdressing operations.

A specific cross-linker, an alkaline metal bis(styrenesulfonyl)imide monomer, is used in the synthesis of single ionic conductive copolymers that are non-fluorinated and non-PEO based. Such copolymers meet the security and costs requirements to be used as solid polymers electrolytes (SPE). They are promising alternatives to standard liquid electrolytes in alkaline metal-ion batteries because of their improved security and inflammability properties. The copolymers described are either polyvinylsulfonates or acrylate vinylsulfonate block-copolymers. Preferred acrylate monomers are methacrylates and preferred vinylsulfonates are styrene sulfonates. The copolymer is prepared by radical polymerization of the vinyl sulfonate and the cross-linker and optionally the acrylate, in particular radical photopolymerization using a functionalized bis(acyl)phosphane oxide (BAPO) as photoinitiator. Also described is the use of such copolymer as solid polymer electrolyte in a lithium ion battery.

A specific cross-linker, an alkaline metal bis(styrenesulfonyl)imide monomer, is used in the synthesis of single ionic conductive copolymers that are non-fluorinated and non-PEO based. Such copolymers meet the security and costs requirements to be used as solid polymers electrolytes (SPE). They are promising alternatives to standard liquid electrolytes in alkaline metal-ion batteries because of their improved security and inflammability properties. The copolymers described are either polyvinylsulfonates or acrylate vinylsulfonate block-copolymers. Preferred acrylate monomers are methacrylates and preferred vinylsulfonates are styrene sulfonates. The copolymer is prepared by radical polymerization of the vinyl sulfonate and the cross-linker and optionally the acrylate, in particular radical photopolymerization using a functionalized bis(acyl)phosphane oxide (BAPO) as photoinitiator. Also described is the use of such copolymer as solid polymer electrolyte in a lithium ion battery.

An improved formulation of conductive polymer is provided. The formulation comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented the ratio of Formula A:
A.sub.xB.sub.yC.sub.z  Formula A
wherein:
A is polystyrenesulfonic acid or salt of polystyrenesulfonate;
B and C separately represent polymerized units substituted by a group selected from:
—C(O)OR.sup.6 wherein R.sup.6 is selected from the group consisting of:
—(CHR.sup.17).sub.b—R.sup.18. All other groups are defined. The conductive polymer has an average particle size of at least 1 nm to no more than 10 microns.

An improved formulation of conductive polymer is provided. The formulation comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented the ratio of Formula A:
A.sub.xB.sub.yC.sub.z  Formula A
wherein:
A is polystyrenesulfonic acid or salt of polystyrenesulfonate;
B and C separately represent polymerized units substituted by a group selected from:
—C(O)OR.sup.6 wherein R.sup.6 is selected from the group consisting of:
—(CHR.sup.17).sub.b—R.sup.18. All other groups are defined. The conductive polymer has an average particle size of at least 1 nm to no more than 10 microns.

To provide a method for producing a particle that can suppress non-specific adsorption without using BSA. A method for producing a particle, including: a first step of mixing a radically polymerizable monomer, an organic silane compound having a silicon atom to which an alkoxy group is bonded and having radical polymerizability, a radical polymerization initiator, a water-soluble polymer, and an aqueous medium to prepare an emulsion; and a second step of adding a specific reactive compound after the first step.

To provide a method for producing a particle that can suppress non-specific adsorption without using BSA. A method for producing a particle, including: a first step of mixing a radically polymerizable monomer, an organic silane compound having a silicon atom to which an alkoxy group is bonded and having radical polymerizability, a radical polymerization initiator, a water-soluble polymer, and an aqueous medium to prepare an emulsion; and a second step of adding a specific reactive compound after the first step.

A polymer compound having a weight average molecular weight in the range of 1,000 to 500,000, and contains one or more repeating units represented by formula (1) and one or more repeating units represented by formula (2): ##STR00001## R.sup.1 represents a hydrogen atom or a methyl group; Rf.sub.1 represents a linear or branched alkyl group having 1 to 4 carbon atoms or a phenyl group, and has at least one fluorine atom or a trifluoromethyl group in Rf.sub.1; Z.sub.1 represents a single bond, an arylene group having 6 to 12 carbon atoms or —C(═O)—O—R.sup.2—; R.sup.2 represents a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 10 carbon atoms or an alkenylene group having 2 to 10 carbon atoms, and may have an ether group, a carbonyl group or an ester group in R.sup.2; and “a” is 0<a≤1.0, and ##STR00002## “b” is 0<b<1.0.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer:

##STR00001##

A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer:

##STR00001##

A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.