The invention relates to a hydrogel based on water, on hydrosoluble monomeric or polymeric isosorbide epoxide and on hydrosoluble amine, to the method for preparing same and to the use thereof.

The invention relates to diols derived from 5-hydroxymethyl furfural, diformyl furan, or derivatives thereof. The invention further relates to diglycidyl ethers derived from the diols of the invention, curable coating compositions containing the diglycidyl ethers, and objects coated with the curable coating compositions. The invention also relates to composites, composites, adhesives, and films containing the diglycidyl ethers of the invention. The invention also relates to methods of making the diols, diglycidyl ethers, and curable coating compositions.

A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.

A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.

Provided is a method for producing a polymer, comprising: a first step for synthesizing a crude polymer by reacting a monomer containing a pyrimidinetrione structure, an imidazolidinedione structure, or a triazinetrione structure, in an organic solvent in the presence of a quaternary phosphonium salt or quaternary ammonium salt; and a second step for precipitating and separating a purified polymer by mixing a poor solvent with the crude polymer-containing solution obtained in the first step.

Provided is a method for producing a polymer, comprising: a first step for synthesizing a crude polymer by reacting a monomer containing a pyrimidinetrione structure, an imidazolidinedione structure, or a triazinetrione structure, in an organic solvent in the presence of a quaternary phosphonium salt or quaternary ammonium salt; and a second step for precipitating and separating a purified polymer by mixing a poor solvent with the crude polymer-containing solution obtained in the first step.

Provided is a composition which is for forming a resist underlayer film and with which the amount of a sublimate derived from a low-molecular-weight component such as an oligomer can be reduced, the composition comprising, for example, an organic solvent and a polymer having a repeating unit represented by formula (1-1), wherein the content of a low-molecular-weight component having a weight average molecular weight of 1,000 or less is 10 mass % or less in the polymer.

##STR00001##

Provided is a composition which is for forming a resist underlayer film and with which the amount of a sublimate derived from a low-molecular-weight component such as an oligomer can be reduced, the composition comprising, for example, an organic solvent and a polymer having a repeating unit represented by formula (1-1), wherein the content of a low-molecular-weight component having a weight average molecular weight of 1,000 or less is 10 mass % or less in the polymer.

##STR00001##

The ester-type epoxy furan resin of the present invention is represented by the following general formula (1).

##STR00001##

(In the general formula (1), R.sup.1 is an alkylene group having 2 to 6 carbon atoms optionally containing a hydroxy group; R.sup.2 and R.sup.3 are each an alkyl group having 1 to 4 carbon atoms, and R.sup.2 and R.sup.3 may be bonded to each other to form a cyclic structure; n is 0 to 300; and a plurality of R.sup.1, R.sup.2, and R.sup.3, if present within the molecule, may be mutually the same or different.)

A prepreg comprising the following constituent elements (A), (B), and (C), the constituent element (C) being present in a surface layer of the prepreg: Constituent element (A): a reinforcing fiber base material; Constituent element (B): an epoxy resin composition containing a curing agent, the epoxy resin composition being cured within the range of from 90° C. to 140° C. (inclusive); and Constituent element (C): particles of a thermoplastic resin having a melting point or a glass transition temperature within the range of from 90° C. to 140° C. (inclusive).