Provided in the present invention are a halogen-free epoxy resin composition, prepreg and laminate using the same, the halogen-free epoxy resin composition comprising: (A) a halogen-free epoxy resin; (B) a crosslinking agent; and (C) a phosphorous-containing phenolic resin, the phosphorous-containing phenolic resin being formed by a synthesis of phenol and formaldehyde with dicyclopentadiene phenol, and being substituted by 9,10-dihydro-9-oxa-10-phosphapheanthrene-10-oxide or a derivative thereof. The prepreg and laminate prepared from the halogen-free epoxy resin composition have a high heat resistance, a low dielectric constant, a low dielectric loss factor and a low water absorption rate, and achieve halogen-free flame retardance.

A conductive resin composition contains (a) tin powder, (b) epoxy resin, and (c) organic acid compound, and satisfies requirement (A) and/or requirement (B): (A) the content of the (a) tin powder, relative to the total amount, 100% by mass, of the (a) tin powder, (b) epoxy resin, and (c) organic acid compound, is 90.1% by mass or higher; and/or (B) (d) curing agent is contained, and (d) curing agent includes one or more types selected from (d1) acid anhydride-based curing agents, (d2) thiol-based curing agents and (d3) phenol-based curing agents. The conductive resin composition is intended to demonstrate good conductivity and excellent adhesion with respect to various types of base materials and to be useful as conductive inks, conductive adhesives, circuit connection materials, etc.

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material, including an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, the minimum melt viscosity being between 1000 Pa*s and 2000 Pa*s, and gradient of melt viscosity between 10 C. higher than the minimum melt viscosity attainment temperature and a temperature 10 C. higher being between 900 Pa*s/ C. and 3100 Pa*s/ C., is applied to a semiconductor chip having a solder-tipped electrode formed thereon, and the semiconductor chip is mounted onto a circuit substrate having a counter electrode opposing the solder-tipped electrode, and the semiconductor chip and the circuit substrate are thermocompressed under bonding conditions of raising the temperature from a first temperature to a second temperature at a predetermined rate.

Resin composition of the present disclosure includes: an epoxy resin; and a hardener, in which the hardener contains a styrene-maleic anhydride copolymer (SMA) and an anhydride having only one anhydride group in a molecule. An acid value of the SMA is in a range from 300 to 550, inclusive. A ratio of an anhydride equivalent number of the anhydride with respect to an epoxy group equivalent number of the epoxy resin is in a range from 0.05 to 0.5, inclusive. A ratio of the total number of the equivalent numbers of the anhydride groups of the anhydride and the SMA with respect to the epoxy group equivalent number is a range from 0.5 to 1.2, inclusive.

A silicone-modified epoxy resin which yields a cured product having low gas permeability and excellent strength; a composition of the silicone-modified epoxy resin; and an epoxy resin cured product obtainable by curing the composition, are provided.

An epoxy resin represented by the following Formula (1):

##STR00001## wherein R.sup.1 represents a hydrocarbon group having 1 to 6 carbon atoms; X represents an organic group having a norbornane epoxy structure, or a hydrocarbon group having 1 to 6 carbon atoms; n represents an integer from 1 to 3; plural R.sup.1s and plural Xs present in the formula may be respectively identical or different; and two or more of plural Xs represent an organic group having a norbornane epoxy structure.

The purpose of the present invention is to provide a silicone-modified epoxy resin which produces a cured product having excellent low gas permeability and strength; a composition of the resin; and an epoxy resin cured product obtainable by curing the composition.

Disclosed is an epoxy resin represented by the following Formula (1):

##STR00001## wherein R.sup.1 independently represents a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R.sup.2 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms; R.sup.3 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms; R.sup.4 represents an oxygen atom or a divalent hydrocarbon group having an aliphatic cyclic structure; R.sup.5 represents silicone chain having a norbornane epoxy structure at either end; and X represents an organic group having a norbornane epoxy group.

Epoxy curing agents are disclosed having an epoxy curing agent comprising at least one room temperature ionic liquid salt, the room temperature ionic liquid salt being a reaction product of (a) at least one polyalkylene polyamine compound represented by formula (I): ##STR00001##
wherein x, y, and z are integers of 2 and 3, m and n and integers of 1-3; and (b) an organic acid having pKa (the negative of the logarithm of the acid dissociation constant) less than 6. The liquid salt is a stable liquid at a temperature greater than 15 C. Curable epoxy-based compositions including the curing agent and articles formed by the curable epoxy-based compositions are also disclosed.

The present invention relates to oligosiloxane epoxy based dynamic adaptable networks and processes of making and using the same. Articles produced from such oligosiloxane dual-dynamic adaptable networks exhibit good structural integrity yet are reprocessable. Such articles can form chemical bond welds with other articles that possess siloxane and/or ester functionality within the network.

A protective film forming composition which has good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of a semiconductor substrate and also has good coverage even in a stepped substrate, and from which a flat film can be formed due to a small difference in film thickness after being embedded; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. This protective film forming composition against a wet etching liquid for semiconductors contains an organic solvent and a polymer having, at a terminal thereof, a structure containing at least one pair of two adjacent hydroxyl groups in a molecule. The structure containing two adjacent hydroxyl groups in a molecule may be 1,2-ethanediol structure (A).

Methods of tuning one or more properties of a multipart structural adhesive composition, the method including providing a Part 1 of the multipart structural adhesive; providing at least a first sub-Part 2 and a second sub-Part 2 of the multipart structural adhesive; and causing to be formed the multipart structural adhesive by combining the Part 1, the first sub-Part 2, and the second sub-Part 2, wherein the amount, ratio, or both of the first sub-part 2 and the second sub-Part 2 impact the one or more properties of the multipart structural adhesive composition, wherein the amounts or ratios of the Part 1, the first sub-Part 2 and the second sub-Part 2 affect the one or more properties of the multipart structural adhesive composition, and wherein the multipart structural adhesive has an overlap shear strength of at least about 0.75 MPa (109 psi).