A composition which is useful for producing a light emitting device having excellent external quantum efficiency contains two or more compounds represented by the formula (C-1) and a phosphorescent compound, in which at least one of the compounds represented by the formula (C-1) is a compound in which R.sup.C is a group represented by the formula (C′-1). ##STR00001##
Ring R.sup.1C and Ring R.sup.2C represent an aromatic hydrocarbon ring or an aromatic hetero ring. R.sup.C represents an oxygen atom, a sulfur atom or a group represented by the formula (C′-1). ##STR00002##
Ring R.sup.3C and Ring R.sup.4C represent an aromatic hydrocarbon ring or an aromatic hetero ring. R.sup.C′ represents a carbon atom, a silicon atom, a germanium atom, a tin atom or a lead atom.

Disclosed are an organic thin film including a semiconducting polymer including a ligand that is metal-coordination bondable or is metal-coordination bonded and an elastomer including a ligand that is metal-coordination bondable or is metal-coordination bonded, wherein the semiconducting polymer and the elastomer are configured to be dynamic intermolecular bonded by a metal-coordination bond, an organic sensor, and an electronic device.

The present invention relates to a novel polymer and an organic electronic device using same. In the polymer according to the present invention, a cyclic electron-donor, including thiophene, selenophene, or a combination thereof, is introduced into a central skeleton having an A-D-A structure including an electron-donor and electron-acceptor unit. Thus, the polymer has not only excellent chemical and thermal stability, but also good crystallinity. Moreover, intermolecular stacking is possible, and thus charge mobility can be maximized.

A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.

The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

A polymer and a light-emitting device employing the same are provided. The polymer includes a first repeat unit with a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification. At least one of A.sup.1, A.sup.2, and A.sup.3 is not hydrogen.

An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.
—Ar—O—(CH.sub.2).sub.a—O—CH.sub.2—X  (1)
—Ar—(CH.sub.2).sub.b—O—CH.sub.2—X  (2)
—Ar—O—(CH.sub.2).sub.c—X  (3)

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

Polymer embodiments comprising nanohoop-containing polymer backbones are described, along with methods of making and using the same. The polymer embodiments exhibit unique radial and linear conjugation and can be used in a variety of devices, such as electronic and/or optoelectronic devices.

The present application relates to a photoactive composition comprising a blend of polymers. The present application further relates to an organic photovoltaic cell or an organic photodetector comprising a photoactive layer consisting of said photoactive composition.