The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

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Elastic Parylene films produced via chemical vapor deposition polymerization (CVDP) on a substrate are disclosed.

A polymer blend, including at least one organic semiconductor (OSC) polymer and at least one photosensitizer, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, wherein the fused thiophene is beta-substituted.

A method of producing a polymer compound which is capable of improving yield while lowering the dispersity of the molecular weight is described. The method of producing polymer compound A containing a constitutional unit (1-2) having a group obtained by removing one or more hydrogen atoms present on Ar.sup.1 from a compound represented by the formula [1-2] involves a first step of separating high molecular weight components contained in a polymer compound B by a fractionation precipitation method from the polymer compound B containing a constitutional unit (1-1) having a group obtained by removing one or more hydrogen atoms present on Ar.sup.1 from a compound represented by the formula [1-1], to obtain a polymer compound C composed of the high molecular weight components, and a second step of converting the constitutional unit (1-1) contained in polymer compound C into constitutional unit (1-2), to obtain polymer compound A:

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A light emitting device with excellent light emission efficiency is provided. The light emitting device has an anode, a cathode, a first layer disposed between the anode and the cathode, and a second layer disposed between the anode and the first layer. The second layer is a layer containing a crosslinked product of a compound having a crosslinkable group selected from Group A, and at least one of the first layer and the second layers contains a compound represented by the formula (T-1). The compound having a crosslinkable group is a polymer compound having a crosslinkable group selected from Group A:

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Disclosed herein are embodiments of aryl compounds and polymers thereof that are made using methods that do not require harsh conditions or expensive reagents. The methods disclosed herein utilize precursor compounds that can be polymerized to form polycyclic aromatic hydrocarbons and polymers, such as carbon-based polymers like nanostructures (e.g., graphene or graphene-like nanoribbons).

The invention relates to ring-opening metathesis polymerization (ROMP) reactions of making polymers suitable for the electronic industry. Particularly, the invention relates to novel polymers with low dielectric constant (D.sub.k) and low dielectric loss (D.sub.f) suited for smaller, lighter, higher speeds and higher frequency transmission electronic products. Such polymers can be used in a variety of materials and composites of the printed circuit board (PCB) industry.

An allyl-containing resin is provided. The allyl-containing resin comprises a repeating unit comprising a structural unit represented by the following formula (I): ##STR00001## wherein, R.sub.1 to R.sub.3 in formula (I) are as defined in the specification; the Fourier transform infrared spectrum of the allyl-containing resin has a signal intensity “a” from 1650 cm.sup.−1 to 1630 cm.sup.−1 and a signal intensity “b” from 1620 cm.sup.−1 to 1560 cm.sup.−1, and 0<a/b≤1.20; and the quantitative .sup.1H-NMR spectrum of the allyl-containing resin has a signal intensity “c” from 3.2 ppm to 6.2 ppm and a signal intensity “d” from 6.6 ppm to 7.4 ppm, and 0<c/d≤1.20.

The present invention relates to a novel compound having an alkoxysilyl group and an active ester group, a method for preparing the same, a composition comprising the same, and a use, wherein the novel compound exhibits improved low moisture absorption and/or low dielectric properties when cured as an epoxy composition, but is not accompanied by loss of thermal expansion characteristics. Disclosed are a novel compound of formulae AF to LF having an alkoxysilyl group and an active ester group, and a method for preparing the same, a composition comprising the same, and a use of same.