Disclosed are conjugated polymers bearing chemical probes and the use thereof for the preparation of chemical sensors based on carbon nanotubes allowing the selective detection of analytes in water.

Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device. ##STR00001## In Chemical Formula 1, Ar.sup.1 to Ar.sup.3, L.sup.1, L.sup.2, and R.sup.1 to R.sup.6 are the same as described in the detailed description.

An osmium-containing conjugated polymer and methods thereof. A structural formula of the osmium-containing conjugated polymer is formula I, a reaction formula of the osmium-containing conjugated polymer is a formula II.

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device.

##STR00001##

Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

A method for forming an electrochromic polymer block includes: forming each of reaction units by reacting two or more electron-donor groups, wherein each of the reaction units includes (i) a first backbone formed by the two or more electron-donor groups and (ii) at least one reactive functional group connected to each end of the first backbone; and forming the electrochromic polymer block by reacting at least two of the reaction units with acid-catalyzed cationic polymerization, wherein the electrochromic polymer block includes a second backbone formed by two or more of the first backbones.

Disclosed are an organic thin film including a semiconducting polymer including a ligand that is metal-coordination bondable or is metal-coordination bonded and an elastomer including a ligand that is metal-coordination bondable or is metal-coordination bonded, wherein the semiconducting polymer and the elastomer are configured to be dynamic intermolecular bonded by a metal-coordination bond, an organic sensor, and an electronic device.

The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

A polymer and a light-emitting device employing the same are provided. The polymer includes a first repeat unit with a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification. At least one of A.sup.1, A.sup.2, and A.sup.3 is not hydrogen.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

The present invention discloses an organic polymer having an asymmetric structure, a preparation method thereof and a use as a photoelectric material thereof. The organic polymer with an asymmetric structure is obtained by polymerization after performing Stille coupling reaction between an electron-donating unit D and an electron-withdrawing unit A in the presence of a solvent and a catalyst. The compound of the present application has good heat stability, controllable absorption level, and is suitable for the preparation of hole transport materials of high-performance perovskite solar cells with high efficiency, flexibility, good stability and a large area as well as donor materials of organic solar cells.