Provided is a hard mask composition having high etching resistance suitable for use in a semiconductor lithography process, and particularly to a spin-on hard mask composition including a dibenzo carbazole polymer and to a patterning method of forming a hard mask layer by applying the composition on an etching layer through spin coating and performing a baking process. The hard mask according to the present invention has effects of exhibiting high solubility and superior mechanical properties, as well as high etching resistance to withstand multiple etching processes.

A method for depositing coating onto a substrate includes providing a monomer for creation of a protective coating on a substrate, energizing the monomer with a plasma generation system, and polymerizing the energized monomer onto the substrate in a plasma-enhanced chemical vapor deposition (PECVD) chamber.

A method is directed to synthesis of poly(triphenylacrylonitrite)s (PTPANs) comprising polycoupling dibromoarenes, internal diynes, and potassium ferrocyanide, resulting in polycoupled dibromoarenes, internal diynes, and potassium ferrocyanide; and producing poly(triphenylacrylonitrite)s (PTPANs) by catalysis of the polycoupled dibromoarenes, internal diynes, and potassium ferrocyanide with palladium acetate and sodium bicarbonate, wherein the catalysis is allowed to proceed in dimethylacetamide under nitrogen at a prescribed temperature for a prescribed time. Further, poly(triphenylacrylonitrite)s (PTPANs) is a polymer and comprises a backbone structure of ##STR00001##
wherein x and y are integers;
wherein each R is independently selected from the group consisting of ##STR00002##
and
wherein each R is independently selected from the group consisting of ##STR00003##

A resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film wherein the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

The present invention is generally related to various types of compositions that comprise a polyindane resin. In particular, the polyindane resins may be utilized in various polymer-based and elastomer-based formulations in order to enhance several properties and characteristics of those formulations. More specifically, adhesive formulations are provided that comprise at least one polyindane resin, which may be used to replace or enhance the functionality of existing hydrocarbon resins typically used in adhesive formulations. Compositions comprising at least one thermoplastic elastomer and at least one polyindane resin are also provided.

Disclosed are solvent-linked porous covalent organic polymers (COPs) and a method of preparing the same, and more particularly porous covalent organic polymers that are linked by a solvent and are thus suitable for the transportation and storage of natural gas, and a method of preparing the porous covalent organic polymers by conducting alkylation polymerization between an aromatic monomer and a chlorine-based solvent in the presence of a Lewis acid catalyst. Porous stretchable covalent organic polymers having pores with various sizes can be synthesized simply and quickly at room temperature and atmospheric pressure without a heating or purification step, and the covalent organic polymers have very high natural gas storage capacity due to the flexible porous network structure thereof and thus are suitable for storage and transportation of natural gas and useful as a natural gas adsorbent.

Provided is a heat-curable resin composition having an excellent workability, and capable of yielding a cured product having both a heat resistance and a low water-absorption property. The heat-curable resin composition contains: (A) a cyanate ester compound having in one molecule at least two cyanato groups, and having a cyanate ester group equivalent of 50 to 140; (B) a cyanate ester compound having in one molecule at least two cyanato groups, and having a cyanate ester group equivalent of 150 to 500; and (C) a curing accelerator,
in which the cyanate ester compound (A) is in an amount of 20 to 85% by mass per a total of 100% by mass of the components (A) and (B), and the cyanate ester compound (B) is in an amount of 15 to 80% by mass per the total of 100% by mass of the components (A) and (B).

Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

Elastic Parylene films produced via chemical vapor deposition polymerization (CVDP) on a substrate are disclosed.

Protective coatings with one or more additives dispersed therethrough are disclosed. A protective coating may comprise a poly(p-xylylene), or parylene. An additive may be configured to cause the protective coating to contrast (e.g., visibly, etc.) with features or components that are exposed beyond a periphery of the protective coating. Additives that provide other characteristics are also disclosed. In addition, methods for applying protective coatings according to this disclosure are disclosed, as are inspection methods.