A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

A light emitting material includes: luminescent nanoparticles; and an ionic crystal containing an anionic component represented by formula (1) below. In the formula, R.sup.1 and R.sup.2 each independently denote a fluorine atom or a fluoroalkyl group, or R.sup.1 and R.sup.2 each denote a fluoroalkylene group to be connected to each other to form a ring. ##STR00001##

A light emitting component comprising a light source (10) for emitting blue light (aa), a first layer (1) comprising a red phosphor, and a second layer (2) comprising luminescent crystals (20). Upon absorption of the light emitted by the light source (10), the luminescent crystals (20) emit light of a wavelength in the green light spectrum (cc). The first layer (1) is arranged adjacent to the light source (10). The second layer (2) is arranged remotely from the first layer (1).

A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d.sub.5/2 as an area percentage is less than or equal to about 25%.

A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.

A method of fabricating the organic-inorganic hybrid coating layer includes: preparing a gel mixture including an organic precursor and colloidal silica particles; preparing a first mixed solution by heating the gel mixture; preparing a second mixed solution by adding quantum dots to the first mixed solution; and coating the second mixed solution on a substrate and irradiating light thereon to form a polymer matrix in which the organic precursor and the colloidal silica particles are crosslinked, and preparing a coating layer in which the quantum dots are dispersed in the polymer matrix, wherein the organic precursor may include at least one of dipentaerythritol pentaacrylate (DPPA) or dipentaerythritol hexaacrylate (DPHA).

A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

The present invention relates to a method for synthesizing a semiconducting nanosized material.