A scintillator assembly for use in a CT imaging system is provided. The scintillator assembly includes a frame including a base, and a plurality of walls extending substantially perpendicular from the base, wherein the base and the plurality of walls define a plurality of pixel compartments, and granular scintillating material contained in at least some of the plurality of pixel compartments, wherein the granular scintillating material is configured to convert x-ray beams into light.

A stabilized fluoride phosphor for light emitting diode (LED) applications includes a particle comprising manganese-activated potassium fluorosilicate and an inorganic coating on each of the particles. The inorganic coating comprises a silicate. A method of making a stabilized fluoride phosphor comprises forming a reaction mixture that includes particles comprising a manganese-activated potassium fluorosilicate; a reactive silicate precursor; a catalyst; a solvent; and water in an amount no greater than about 10 vol. %. The reaction mixture is agitated to suspend the particles therein. As the reactive silicate precursor undergoes hydrolysis and condensation in the reaction mixture, an inorganic coating comprising a silicate is formed on the particles. Thus, a stabilized fluoride phosphor is formed.

Some phosphor powders can be difficult to form into ceramic compacts because they are difficult to sinter. As described herein, phosphor powders that can degrade under conventional sintering temperatures can be sintered by heating the powder at a lower temperature, such as less than 800° C., while the powder is under greater than atmospheric pressure, such as at least 0.05 GPa. Phosphor ceramic compacts prepared by this method, and light-emitting devices incorporating these phosphor ceramic compacts, are also described.

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:

ABX.sub.3+α  Chemical Formula 1

wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF.sub.4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers

The present invention aims to provide an image display device including an optical film having a thickness suitable for practical use without including any special inorganic material, wherein the image display device has high color rendering properties and is capable of minimizing the occurrence of blackout and interference colors (rainbow unevenness) even when the image display device includes light sources that emit light having a narrow emission spectrum. The present invention provides an image display device including an optical film having an in-plane birefringence and a polarizer in this order, wherein the optical film and the polarizer are disposed to form an angle of about 45° between a slow axis of the optical film and an absorption axis of the polarizer, the optical film has a retardation of 3000 nm or more, and light incident on the optical film provides at least 50% coverage of ITU-R BT.2020.

A process for preparing a Mn.sup.+4 doped phosphor of formula I
A.sub.x[MF.sub.y]:Mn.sup.+4   I
includes combining a first solution comprising a source of A and a second solution comprising H.sub.2MF.sub.6 in the presence of a source of Mn, to form the Mn.sup.+4 doped phosphor;
wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; y is 5, 6 or 7; and
wherein a value of a Hammett acidity function of the first solution is at least −0.9. Particles produced by the process may have a particle size distribution with a D.sub.50 particle size of less than 10 μm.

A phosphor powder contains an EU-activated β-type sialon phosphor particles. When a median diameter in the phosphor powder having not been subjected to an ultrasonic homogenizer treatment is set as D1 and a median diameter in the phosphor powder having been subjected to an ultrasonic homogenizer treatment is set as D2, 1.05≤D1/D2≤1.70. A dispersion liquid in which 30 mg of the phosphor powder is uniformly dispersed in 100 ml of a 0.2% concentration of a sodium hexametaphosphate aqueous solution is added to a columnar container of which a bottom surface has an inner diameter of 5.5 cm. Then, the dispersion liquid is irradiated with ultrasonic waves for 3 minutes at a frequency of 19.5 kHz, and an output of 150 W, in a state where a cylindrical tip, which has an outer diameter of 20 mm, of an ultrasonic homogenizer is immersed in the dispersion liquid in ≥1.0 cm.

The present invention relates to the field of luminescent crystals (LCs), and more specifically to Quantum Dots (QDs) of formula M.sup.1.sub.aM.sup.2.sub.bX.sub.c, wherein the substituents are as defined in the specification. The invention provides methods of manufacturing such luminescent crystals, particularly by dispersing suitable starting materials in the presence of a liquid and by the aid of milling balls; to compositions comprising luminescent crystals and to electronic devices, decorative coatings; and to intermediates comprising luminescent crystals.

The present invention relates to a method for producing core-shell nanocrystals consisting of a metal-containing nanocrystal core and a shell layer comprising at least one metal oxide material having variable shell thicknesses, and use of the core-shell nanocrystals for different applications.