The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.

Embodiments of the present disclosure generally describe scintillation materials, including colloidal scintillation materials and solid scintillation materials, methods of preparing the scintillation materials, applications of the scintillation materials, methods of using the scintillation materials, and the like.

An aspect of the present disclosure is a method of making a device, wherein the method includes, in order, depositing a layer of a photoresist onto a substrate, depositing a mask onto the photoresist, developing the photoresist, resulting in the forming of a grid having a plurality of cavities, and depositing a semiconductor onto the grid, resulting in substantially filling each cavity with the semiconductor.

The present invention relates to a ligand-exchanged inorganic perovskite quantum dot thin film and a solar cell comprising the same. The inorganic perovskite quantum dot thin film provided in one aspect of the present invention is capable of more effective ligand exchange by directly inserting the organic ligand ion-based salt generating organic ligand ions, and the thin film can be used to prepare solar cells with high power conversion efficiency. Therefore, the thin film of the present invention can contribute to the commercialization of perovskite quantum dot solar cells in the future.

A quantum dot light emitting material is provided, which includes: a core including an inorganic oxide; and a quantum dot layer covering the core and including perovskite quantum dots. In addition, a diffusion plate including the aforesaid quantum dot light emitting material is also provided.

A quantum dot light emitting material is provided, which includes: a core comprising an inorganic oxide; a quantum dot layer covering the core and comprising perovskite quantum dots; and a protection layer covering the quantum dot layer, wherein the protection layer comprises PbX(OH), and X is Cl, Br or I. In addition, a method for manufacturing the aforesaid quantum dot light emitting material is also provided. Moreover, a diffusion plate comprising the aforesaid quantum dot light emitting material is also provided.

The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z].sub.pO.sub.q and a compound of formula [A].sub.a[M].sub.b[X].sub.c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.

The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z].sub.pO.sub.q and a compound of formula [A].sub.a[M].sub.b[X].sub.c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

The present disclosure relates to a laminated structure comprising a film comprising a light-emitting perovskite compound, a first substrate, and a second substrate, in which the film is positioned between the first substrate and the second substrate.