A method for preparing inorganic halogenated lead perovskite quantum dots and a display device are provided. The method includes: a first coordination solution preparing step, a cesium oleate solution preparing step, a centrifugal separation step, a second coordination solution preparing step, a first ion exchange step, and a second ion exchange step. The present invention also provides a display device including a quantum dot layer, wherein luminescent quantum dots of the quantum dot layer are inorganic halogenated lead cesium perovskite quantum dots of the present invention.

A coated phosphor comprises phosphor particles, wherein said phosphor particles comprise manganese-activated complex fluoride phosphors; and a coating on individual ones of said phosphor particles, said coating comprising a layer of carboxylic acid material encapsulating the individual phosphor particles.

A preservation method of a quantum dot and a quantum dot composition are provided. The method includes the following steps. A quantum dot is mixed with a preservative to form a quantum dot composition, wherein the preservative is a long-chain unsaturated compound, and based on the total weight of the quantum dot composition, the content of the quantum dot is 5 wt % to 80 wt %, and the content of the preservative is 20 wt % to 95 wt %. The quantum dot composition is sealed for preservation.

Colloidal perovskite nanoplatelets can provide a material platform, with tunability extending from the deep UV, across the visible, into the near-IR. The high degree of spectral tunability can be achieved through variation of the cation, metal, and halide composition as well as nanoplatelet thickness.

A perovskite ink is provided. The perovskite ink comprises a first polar solvent. The first polar solvent has a boiling point of 150° C. or more and a melting point of 30° C. or less. The perovskite ink further comprises a first light emitting perovskite material mixed in the first polar solvent at a concentration in the range of 0.01 wt. % to 10 wt. %.

Provided are a perovskite film and method for manufacturing the same, a perovskite electroluminescent device and method for manufacturing the same, and a display device, which belongs to the technical field of displaying. The perovskite film comprises a crystalline perovskite and a halogenated amine ligand grafted onto the crystalline perovskite. Since the perovskite film comprises the halogenated amine ligand, the surface of the perovskite film is smooth, and the surface coverage of the crystalline perovskite is high without significant void defects. Meanwhile, the perovskite film also has a high fluorescence quantum yield due to the halogenated amine ligand comprised in the perovskite film.

A quantum dot luminescent material and a method of producing thereof. The quantum dot luminescent material includes a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and an electron injection layer. The quantum dot luminescent layer is located on the hole transport layer, and the quantum dot luminescent layer includes uniformly distributed perovskite nanodots.

The present disclosure provides a display panel and a manufacturing method of the display panel, the display panel includes a base substrate, a pixel definition layer, and a color conversion medium; the pixel definition layer and the color conversion medium are successively formed on the base substrate; a pixel opening is defined on the pixel definition layer, the color conversion medium is positioned in the pixel opening; the color conversion medium includes a perovskite color conversion functional layer and a first water-oxygen barrier layer; the first water-oxygen barrier layer is positioned on a side of the perovskite color conversion functional layer away from the base substrate.

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Disclosed are a method for preparing a fluorescent nanomaterial-polymer composite and a wavelength converting element, and a light emitting device. The method for preparing the fluorescent nanomaterial-polymer composite includes: at least one precursor provided, the precursor includes a fluorescent nanomaterial and a polymer; and in a first temperature at or higher than a melting point of the polymer, the precursor is mixed, and then cooled.