Provided is a semiconductor nanoparticle complex having both improved fluorescence quantum yield and improved heat resistance. A semiconductor nanoparticle complex according to an embodiment includes a semiconductor nanoparticle complex in which two or more ligands including a ligand I and a ligand II are coordinated to the surface of a semiconductor nanoparticle, wherein: the ligands are composed of an organic group and a coordinating group; the ligand I has one mercapto group as the coordinating group; and the ligand II has at least two or more mercapto groups as the coordinating groups.

A semiconductor nanocrystal including an anion of an inorganic metal salt and a first organic ligand bound to a surface of the semiconductor nanocrystal, wherein the first organic ligand includes a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate, a substituted or unsubstituted C3 to C30 aromatic hetero cyclic group and a carboxylate, or a combination thereof.

Disclosed is a light-emitting composition with a perovskite compound and a compound represented by C.sub.lN.sub.mH.sub.n, an ion of the compound represented by C.sub.lN.sub.mH.sub.n, or a salt of the ion of the compound represented by C.sub.lN.sub.mH.sub.n, wherein each of l, m and n independently represents an integer.

A quantum dot has a fluorescent crystalline nanoparticle, wherein the quantum dot has a core-shell structure including a core particle containing a first metal element and a shell layer containing a second metal element, at an interface between the core particle and the shell layer, a third metal element different from the first metal element and the second metal element is present, and an amount of the third metal element with respect to an amount of the first metal element contained in the core particle is 10% or less in terms of molar ratio. As a result the quantum dot has excellent controllability of the emission wavelength and high luminous properties and luminous efficiency.

Disclosed is a composite particle including a plurality of nanoparticles encapsulated in an inorganic material, wherein the plurality of nanoparticles is uniformly dispersed in the inorganic material. Also disclosed is relates to a light emitting material, a support supporting at least one composite particle and/or a light emitting material and an optoelectronic device including at least one composite particle and/or a light emitting material.

The present application discloses a method for preparing an indium phosphide (InP) nanocrystal by using a novel phosphorus precursor as a raw material, and an InP nanocrystal having different wavelengths prepared by the method. The preparation method of the InP nanocrystal includes a step of: using M-(O—C≡P).sub.n as one of reaction precursors, where, M is a metal element, and n is a valence state of the M element. In this present application, M-(O—C≡P).sub.n serves as one of reaction precursors; due to that the metal element M and the element P are from the same reaction precursor, a nanocrystal of a nanocrystal core containing In, P and a metal element M can be prepared.

The present invention relates to a method for preparing a nanosized light emitting semiconductor material.

A composition including a quantum dot, a dispersing agent for dispersing the quantum dot, a polymerizable monomer including a carbon-carbon double bond, an initiator, a hollow metal oxide particulate, and a solvent, and a quantum dot-polymer composite manufactured from the composition.

A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A.sub.450/A.sub.first, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:
(Abs.sub.first−Abs.sub.valley)/Abs.sub.first=VD wherein, Abs.sub.first is an absorption value at the first absorption peak wavelength and Abs.sub.valley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.

Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.