Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

The invention relates to a security feature having a luminescent substance with the general formula AXO.sub.3: Z (I) or B.sub.0.5XO.sub.3: Z (II) or A.sub.1-2yB.sub.yXO.sub.3: Z (III), where A is an alkali metal, B is an alkaline earth metal, X stands for Nb or Ta, Z is the luminescence activator, and y lies between 0 and 0.5. The invention also relates to a security element, a security paper and a value document which is equipped with the security feature according to the invention, and to the use of the luminescent substance with the general formula (I), (II) or (III) as a feature substance for authentication. The luminescent substance is obtained by annealing solid starting materials.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A method and a device for generating light and to a use of a component for emitting light is disclosed. In a method for generating light, a component comprising a first material from the group of cuprates is subjected to an electric voltage and/or an electric field at a temperature T below 0 C. such that the component emits light. In this way, a light generation is provided which is accompanied by a substantial energy saving as well as a significantly reduced technical effort and which is also possible at cryogenic temperatures.

A wavelength converting structure is disclosed, the wavelength converting structure including a spinel type SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including AE.sub.1-x-zA.sub.z+0.5(x-y)D.sub.2+0.5(x-y)-z-u E.sub.zO.sub.4:Ni.sub.y,Cr.sub.u where AE=Mg, Zn, Co, or Be, or mixtures thereof, A=Li, Na, Cu, or Ag, or mixtures thereof, D=Ga, Al, B, In, or Sc, or mixtures thereof, and E=Si, Ge, Sn, Ti, Zr, or Hf, or mixtures thereof; where 0x1, 0<y0.1, 0z1, 0u0.2.