C09K11/77218

PHOSPHOR AND LIGHT-EMITTING EQUIPMENT USING PHOSPHOR

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Phosphor, Method for Production Same, Light Emitting Device, Image Display, Pigment and Ultraviolet Light Absorber

A phosphor, combined with LED having not exceeding 470 nm, of high emission intensity and with chemical and thermal stability is provided. The phosphor according to the present invention comprises an inorganic compound in which element A (A is one or two or more kinds of elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) is solid solved in an inorganic crystal including at least metal element M and non-metal element X and represented by M.sub.nX.sub.n+1 (3n5), an inorganic crystal having the same crystal structure, or an inorganic crystal including a solid solution thereof. Here, M comprises at least Al and Si, and if necessary element L (L is a metal element other than Al and Si) and X comprises N, O if necessary, and element Z if necessary (Z is a non-metal element other than N and O).

LIGHT SOURCE DEVICE AND LIGHT EMITTING DEVICE
20190088832 · 2019-03-21 ·

Provided is a light source device including: at least one light emitting element of at least one type; at least one far-red phosphor that, when excited by output light from the light emitting element, emits light having a peak in a wavelength range of 680 nm or more to less than 780 nm; and at least one phosphor that, when excited by the output light from the light emitting element, emits light having a peak in a wavelength range different from the wavelength range of the light emitted from the far-red phosphor. The spectrum of light emitted from the light source device has characteristic A below. This light source device has sufficient emission intensity over the entire visible range, i.e., over a wavelength range of from 400 nm to 750 nm inclusive.

Characteristic A: The ratio of a minimum emission intensity to a maximum emission intensity in a wavelength range of from 400 nm to 750 nm inclusive is 20% or more.

PHOSPHOR, METHOD FOR PRODUCING SAME, LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE

Provided are a phosphor emitting light having a wavelength of 600 nm or more in the red-to-nearinfrared range when irradiated with visible light or ultraviolet light; a method for producing same; a light emitting element using same; and a light emitting device using same. The phosphor includes an inorganic compound including A element, M element, D element, E element (A is at least one element selected from the group of Mg, Ca, Sr and Ba; M is at least one element selected from the group of Mn, Eu, Ce, Nd, Tb, Dy, Ho, Er, Tm and Yb; D is Si and/or Al; and E is O and/or N) and, if necessary, G element (G is Li), and represented by (A, M).sub.aD.sub.dE.sub.eG.sub.g, (atomic fraction parameters a, d, e and g satisfy 2.4?a?4.8, 17.4?d?22.2, 26.2?e?28.6 and 0?g?3).

NITRIDE PHOSPHOR AND METHOD FOR PRODUCING SAME
20240279547 · 2024-08-22 · ·

Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN.sub.3; and performing a heat treatment of the mixture at a temperature of 1,300? C. to 1,900? C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

Phosphor and light-emitting equipment using phosphor

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Fluorescent powder and light-emitting device including the same

The present disclosure relates to a fluorescent powder and a light-emitting device including the same. The fluorescent powder includes an inorganic compound. The inorganic compound contains components including an element M, an element A, an element D, an element E, and an element R. The element M is selected from Eu, Ce, Mn, Tb, Dy, and Tm, the element A is selected from Mg, Ca, Sr, and Ba, the element D is selected from B, Al, Ga, In, La, Gd, Sc, Lu, and Y, the element E is selected from Si, Ge, Zr, and Hf, and the element R is at least two elements selected from N, O, F, and Cl. In a powder X-Ray Diffraction (XRD) spectrum with CoK radiation, the inorganic compound at least has diffraction peaks within ranges of an Bragg angle (2) from 27.3 to 28.3, 29.7 to 30.7, 41.9 to 42.9, and 43.5 to 44.5.

PHOSPHOR AND LIGHT-EMITTING EQUIPMENT USING PHOSPHOR

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Inorganic phosphor, manufacture thereof, light-emitting device, and image display utilizing inorganic phosphor

Provided is a chemically and thermally stable phosphor having different light-emitting characteristics than a conventional phosphor and having high light-emitting intensity even when combined with an LED of 410 nm or lower. The phosphor comprises an inorganic compound in which an inorganic crystal including A element, D element, X element (A is one or more elements selected from Mg, Ca, Sr, and Ba; D is one or more elements selected from Si, Ge, Sn, Ti, Zr, and Hf; and X is one or more elements selected from O, N, and F), and, if necessary, E element (where E is one or more elements selected from B, Al, Ga, In, Sc, Y, and La) includes Li element and M element (where M is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb).

Nitride phosphor and method for producing same

Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN.sub.3; and performing a heat treatment of the mixture at a temperature of 1,300 C. to 1,900 C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.