The present invention relates to novel phosphor mixtures and to a light-emitting device which comprises at least one of the novel phosphor mixtures. The phosphor mixtures can be used in phosphor-converted LEDs with a semiconductor that emits in the violet spectral region. The present invention furthermore relates to a lighting system which may comprise the light-emitting devices according to the invention, and to a dynamic lighting system. The present invention furthermore relates to a process for the preparation of the phosphor mixtures according to the invention and to the use thereof in light-emitting devices for use in general lighting and/or in specialty lighting.

An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na).sub.2(Si,Ti)F.sub.6:Mn.sup.4+ and a second red phosphor of the formula(M).sub.2-xEu.sub.xSi.sub.2Al.sub.2N.sub.6 where M=Sr, Ca, Ba, and/or Mg and 0.001x0.2, and wherein the optoelectronic device is configured to emit white total radiation.

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Provided is a light-emitting device including a light-emitting element having a peak emission wavelength in a range of from 400 nm to 470 nm, and a fluorescent member including a first fluorescent material including an aluminate that contains Mg, Mn, and at least one alkali earth metal selected from the group consisting of Ba, Sr, and Ca, a second fluorescent material having a different composition from the first fluorescent material, and a third fluorescent material. The first, second and third fluorescent materials have a peak emission wavelength in a range of from 510 nm to 525 nm, from 510 nm to 550 nm, and from 620 nm to 670 nm, respectively.

A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm to 470 nm, and a fluorescent member. The fluorescent member includes a first fluorescent material having a peak light-emitting wavelength in the range of 480 nm to less than 520 nm, a second fluorescent material having a peak light-emitting wavelength in the range of 520 nm to less than 600 nm, and a third fluorescent material having a peak light-emitting wavelength in the range of 600 nm to 670 nm. The light-emitting device has a ratio of an effective radiant intensity for melatonin secretion suppression to an effective radiant intensity for blue-light retinal damage of 1.53 to 1.70 when the light-emitting device emits light with a correlated color temperature of 2700 K to less than 3500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 3500 K to less than 4500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 4500 K to less than 5700 K; and 1.35 to 1.65 when the light-emitting device emits light with a correlated color temperature of 5700 K to 7200 K.

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6jk2l3m4n=w; 0.8t1; 3.5u4; 3.5v4; (0.2) w0.2 and 0m<0.875 v and/or vl>0.125 v.

A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less.

To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 1000 C to the emission intensity at 25 C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

A exemplary light emitting device includes an excitation source operable to generate excitation light with a dominant wavelength in a range 450 nm to 470 nm; a red photoluminescence material which generates light with a peak emission wavelength in a range 600 nm to 620 nm with a full width at half maximum emission intensity greater than 70 nm and less than 80 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength in a range 530 nm to 550 nm; and a narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 625 nm to 635 nm with a full width at half maximum emission intensity greater than about 5 nm and less than about 25 nm.

A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 m or more and 30 m or less, wherein the second fluorescent material comprises a -SiAlON fluorescent material, the circularity of the -SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the -SiAlON fluorescent material is in a range of 2 m or more and 30 m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 m or more and 200 m or less.