To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100 C. to the emission intensity at 25 C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440 nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing Ca, Mg, and Cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing Al and at least one of Sr and Ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate.

A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 m or more and 30 m or less, wherein the second fluorescent material comprises a -SiAlON fluorescent material, the circularity of the -SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the -SiAlON fluorescent material is in a range of 2 m or more and 30 m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 m or more and 200 m or less.

A light emitting diode (LED) device may include an LED die having a first surface on a substrate. A first phosphor layer may be formed on a second surface and sides of the LED die. The second surface may be opposite the first surface. A second phosphor layer may be formed on the first phosphor layer. The second phosphor layer may have a peak emission wavelength (L.sub.pk2) located between a peak emission wavelength of the LED die (L.sub.pkD) and a peak emission wavelength of the first phosphor layer (L.sub.pk2).

A light-emitting device includes a light-emitting element with a peak emission wavelength in a range of 400 nm to 410 nm and a fluorescent member that contains a first phosphor with a peak emission wavelength in a range of 440 nm to 470 nm containing a Eu-activated alkaline-earth phosphate that contains Cl in a composition, a second phosphor with a peak emission wavelength in a range of 500 nm to 530 nm containing a Eu-activated halogen-containing alkaline-earth silicate, a third phosphor with a peak emission wavelength in a range of 530 nm to 600 nm containing a Ce-activated rare-earth aluminate, and a fourth phosphor with a peak emission wavelength in a range of 600 nm to 660 nm containing a Eu-activated silicon nitride containing Al and at least one of Sr and Ca in a composition.

A white light emitting device or LED-filament comprises: a solid-state light emitter (LED) operable to generate excitation light; a first phosphor associated with the solid-state light emitter to generate light with a peak emission wavelength in a range 500 nm to 575 nm; and a second phosphor associated with the solid-state light emitter to generate light with a peak emission wavelength in a range 600 nm to 650 nm, wherein a percentage decrease in conversion efficiency corresponding to an increase in excitation light photon density exhibited by the second phosphor is larger than a percentage decrease in conversion efficiency corresponding to the same increase in excitation light photon density exhibited by the first phosphor.

A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440 nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing Ca, Mg, and Cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing Al and at least one of Sr and Ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate.

The present invention relates to novel phosphor mixtures and to a light-emitting device which comprises at least one of the novel phosphor mixtures. The phosphor mixtures can be used in phosphor-converted LEDs with a semiconductor that emits in the violet spectral region. The present invention furthermore relates to a lighting system which may comprise the light-emitting devices according to the invention, and to a dynamic lighting system. The present invention furthermore relates to a process for the preparation of the phosphor mixtures according to the invention and to the use thereof in light-emitting devices for use in general lighting and/or in specialty lighting.

Embodiments of the invention include a luminescent ceramic including (Ba.sub.1-xSr.sub.x).sub.2-zSi.sub.5-yO.sub.4yN.sub.8-4y:Eu.sub.z 258 phase wavelength converting material (0.5x0.9; 0y1; 0.001z0.02) and M.sub.3Si.sub.3O.sub.3N.sub.4 3334 phase material (M=Ba, Sr, Eu). The M.sub.3Si.sub.3O.sub.3N.sub.4 3334 phase material comprises no more than 5 weight % of the material.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.