A phosphor in which an element represented by R.sub. is solid-solutionized in a phosphor host crystal represented by M.sub.(L, A).sub.X.sub., wherein M is at least one type of element selected from Mg, Ca, Sr, Ba and Zn, L is at least one type of element selected from Li, Na and K, A is at least one type of element selected from Al, Ga, B, In, Sc, Y, La and Si, X is at least one type of element selected from O, N, F and Cl (where all of X being N is excluded), R is at least one type of element selected from Mn, Cr, Ti, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho and Yb, , , and satisfy +++=9, 0.00<1.30, 3.704.30, 3.704.30, and 0.00<1.30.

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6jk2l3m4n=w; 0.8t1; 3.5u4; 3.5v4; (0.2) w0.2 and 0m<0.875 v and/or vl>0.125 v.

Disclosed are a production method for a nitride fluorescent material, a nitride fluorescent material and a light emitting device. The production method is for producing a nitride fluorescent material that has, as a fluorescent material core, a calcined body having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al, and optionally Si, and N, and the method includes preparing a calcined body having the above-mentioned composition, bringing the calcined body into contact with a fluorine-containing substance, and subjecting it to a first heat treatment at a temperature of 100 C. or higher and 500 C. or lower to form a fluoride-containing first film on the calcined body, and forming on the calcined body, a second film that contains a metal oxide containing at least one metal element M2 selected from the group consisting of Si, Al, Ti, Zr, Sn and Zn and subjecting it to a second heat treatment at a temperature in a range of higher than 250 C. and 500 C. or lower.

A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al.sub.2Li.sub.2O.sub.2N.sub.2]:Eu, crystallized in the tetragonal space group P4.sub.2/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

A red phosphor comprising a first red phosphor and a second red phosphor having adjustable wavelength. The first red phosphor is made from a substance having structure formula M.sub.2AX.sub.6:Mn.sup.4+, wherein the element M is selected from Li, Na, K, Rb or Cs, the element A is selected from Ti, Si, Ge or Zr, and the element X is selected from F, Cl or Br; the ratio of the second red phosphor to the red phosphor ranges from 0.01% to 15%. Further provided is a white LED and a backlight module. The adjustably colored points of a device including M.sub.2AX.sub.6:Mn.sup.4+ are achieved by adding a second red phosphor having various wavelength to the red phosphor including M.sub.2AX.sub.6:Mn.sup.4+ whose emission wavelength and spectral shape cannot be adjusted. The device can enable full range of colored points with hardly any reduction of the NTSC color gamut.

A white LED including red phosphor, at least one blue LED chip and at least one green LED chip, wherein a red light, a blue light and a green light are mixed simultaneously to produce a white light. The red phosphor comprises a first red phosphor and a second red phosphor. The first red phosphor is made from a substance having structure formula M.sub.2AX.sub.6:Mn.sup.4+, wherein the element M is selected from Li, Na, K, Rb or Cs, the element A is selected from Ti, Si, Ge or Zr, and the element X is selected from F, Cl or Br; the ratio of the second red phosphor to the red phosphor ranges from 0.01% to 15%. Further provided is a backlight module. The adjustably colored points of a device comprising M.sub.2AX.sub.6:Mn.sup.4+ are achieved by adding a second red phosphor to the red phosphor comprising M.sub.2AX.sub.6:Mn.sup.4+.

Provided is a production method of a nitride fluorescent material capable of producing a nitride fluorescent material having a higher emission intensity. The production method is for producing a nitride fluorescent material having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al and N, which includes subjecting a raw material mixture containing elements constituting the composition of the nitride fluorescent material, along with SrF.sub.2 and/or LiF added thereto as a flux, to a heat treatment, wherein the amount of the flux is in a range of 5.0% by mass or more and 15% by mass or less relative to the total amount, 100% by mass of the raw material mixture and the flux.

A device including an LED light source optically coupled to a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented. The U.sup.6+-doped phosphate-vanadate phosphors are selected from the group consisting of compositions of formulas (A1)-(A12). The U.sup.6+-doped halide phosphors are selected from the group consisting of compositions for formulas (B1)-(B3). The U.sup.6+-doped oxyhalide phosphors are selected from the group consisting of compositions of formulas (C1)-(C5). The U.sup.6+-doped silicate-germanate phosphors are selected from the group consisting of compositions of formulas (D1)-(D11). The U.sup.6+-doped alkali earth oxide phosphors are selected from the group consisting of formulas (E1)-(E11).

The invention relates to an optoelectronic component (100) having a semiconductor chip (2) for generating a primary radiation in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip and is designed to generate a secondary radiation from the primary radiation, wherein the conversion element (4) comprises at least one first phosphor (9) and a second phosphor (10), wherein the first phosphor (9) is Sr(Sr.sub.1xCa.sub.x)Si.sub.2Al.sub.2N.sub.6:Eu.sup.2+ and/or (Sr.sub.1yCa.sub.y)[LiAl.sub.3N.sub.4]:Eu.sup.2+, where 0x1 and 0y1, wherein a total radiation (G) exiting from the component (100) is white mixed light.

Disclosed are a production method for a nitride fluorescent material, a nitride fluorescent material and a light emitting device. The production method is for producing a nitride fluorescent material that has, as a fluorescent material core, a calcined body having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al, and optionally Si, and N, and the method includes preparing a calcined body having the above-mentioned composition, bringing the calcined body into contact with a fluorine-containing substance, and subjecting it to a first heat treatment at a temperature of 100 C. or higher and 500 C. or lower to form a fluoride-containing first film on the calcined body, and forming on the calcined body, a second film that contains a metal oxide containing at least one metal element M2 selected from the group consisting of Si, Al, Ti, Zr, Sn and Zn and subjecting it to a second heat treatment at a temperature in a range of higher than 250 C. and 500 C. or lower.