The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

A light source module and a lighting device including the light source module are provided. The light source module includes a first luminous element and a package part covering the first luminous element. The package part includes a first additional illuminant, a second additional illuminant, and a third additional illuminant. The light emitted by the illuminants is mixed to form positive white light which serves as the emitted light of the light source module. The light source module provided by the present disclosure provides an LED positive white light (5000K) light source with high light efficiency, high CS value and high color rendering property by controlling the proportion of luminous energy in different wavelength regions in the total luminous energy. Under the same illumination, the spectrum with high CS value is especially suitable for people to concentrate on learning and working.

A light emitting device is disclosed and includes an emission source configured to emit a primary blue light and a wavelength-converting element configured to convert the primary blue light to a secondary light, where the wavelength-converting element including a red phosphor material having a peak emission wavelength that is less than 620 nm and a green phosphor material having a peak emission wavelength that is greater than 530 nm. The device may have a correlated color temperature (CCT) in the range of 1600K-2500K, may exhibit a melanopic/photopic ratio less than 0.25 and/or may exhibit a radiometric power fraction of light having a wavelength below 530 nm below 0.1.

A light emitting device comprises a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less and a first fluorescent material having a light emission peak wavelength in a range of 570 nm or more and 680 nm or less, and emits light having a correlated color temperature being 1,950 K or less, an average color rendering index Ra being 51 or more, a full width at half maximum of a light emission peak having a maximum light emission intensity in a light emission spectrum of the light emitting device being 110 nm or less, and a first glare index Ls1/L that is a ratio of a first effective radiance Ls1 to a luminance L being 0.493 or less, wherein Ls1 and L are as defined in the disclosure.

A luminescent layer is described comprising an Eu.sup.2+ doped inorganic luminescent material comprising or consisting essentially of the elements Al and/or Si and the elements O and/or N, the doped inorganic luminescent material converting radiation of the UV region between 200 nm and 400 nm of the solar spectrum into the photosynthetically active radiation (PAR) region (400 nm-700 nm) of the solar spectrum, wherein the Si concentration in the inorganic luminescent material is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu2+ between 0.01 and 30 at. %.

Luminescent greenhouse glazing structures are described wherein the glazing structures comprise: a glass pane for a greenhouse; and, one or more Eu.sup.2+ doped amorphous inorganic luminescent thin film layers provided over the glass pane, wherein the one or more Eu.sup.2+ doped amorphous inorganic luminescent layers comprise or consist essentially of the elements Al and/or Si and the elements O and/or N; and, wherein the Si concentration is selected between 0 and 45 at. %, the Al concentration between 0 and 50 at. %, the O concentration between 0 and 70 at. %, the N concentration between 0 and 60 at. % and the Eu.sup.2+ between 0.01 and 30 at. %.

A phosphor may have the general formula EA.sub.2A.sub.4D.sub.3O.sub.xN.sub.8-x:RE. EA may be selected from the group of divalent elements. A may be selected from the group of monovalent, divalent or trivalent elements. D may be selected from the group of trivalent or tetravalent elements. RE may be an activator element. 0≤x≤8, and ε(4+4y+3z)=3(8−x)+2x with the charge number y of element A, the charge number z of element D, and ε=0.9-1.1.

A fluorescent member includes: a wavelength converter including an incidence part on which a light of a light source is incident and an output part from which a converted light subjected to wavelength conversion as a result of excitation by an incident light is output; and a reflecting part provided in at least a portion of a surface of the wavelength converter. The wavelength converter is comprised of a material whereby a degree of scattering of the light of the light source incident via the incidence part and traveling toward the output part is smaller than in the case of a polycrystalline material.

Provided are a new phosphor having emission characteristics different from the conventional nitride or oxynitride phosphor, a manufacturing method, and a light-emitting device. In an embodiment, the phosphor may include inorganic substance having crystal represented by A.sub.26(D, E).sub.51X.sub.86 including at least A, D, X (A is at least one kind of element selected from Mg, Ca, Sr, and Ba; and D is Si, and X is at least one kind of element selected from O, N, and F); and further includes, if necessary, E (E is at least one kind of element selected from B, Al, Ga, and In) wherein the crystal further includes M (M is at least one kind of element selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb). Upon irradiation of excitation source, the maximum value of emission peak in a wavelength range from 630 nm to 850 nm may occur.

A nitride near-infrared fluorescent material has a general molecular formula of the nitride near-infrared fluorescent material is (Ca.sub.1-x-y-zSr.sub.xBa.sub.yEu.sub.z).sub.3[Li.sub.aMg.sub.bAl.sub.cSi.sub.d]N.sub.6. In the general molecular formula, 0≤x<1; 0≤y≤0.3; 0<z≤0.02; 3.4≤a≤4; 0≤b≤0.2; 0≤c≤0.4; 1.8≤d≤2; a+2b+3c+4d=12. The material can be adjusted and controlled to achieve a maximum emission peak wavelength of 830 nm, a maximum half-peak width of 4283 cm.sup.−1, and a quantum yield of 77%.