C09K11/77348

Lighting device

A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA).sub.a(MB).sub.b(MC).sub.c(MD).sub.d(TA).sub.e(TB).sub.f(TC).sub.g(TD).sub.h(TE).sub.i(TF).sub.j(XA).sub.k(XB).sub.l(XC).sub.m(XD).sub.n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2) w≤0.2 and 0≤m<0.875 v and/or v≥l>0.125 v.

Light emitting device and fabricating method thereof

A light-emitting device includes a light-emitting element for emitting primary light, and a wavelength conversion unit for absorbing part of the primary light and emitting secondary light having a wavelength longer than that of the primary light, wherein the wavelength conversion unit includes plural kinds of phosphors having light absorption characteristics different from each other, and then at least one kind of phosphor among the plural kinds of phosphors has an absorption characteristic that can absorb the secondary light emitted from at least another kind of phosphor among the plural kinds of phosphors.

WAVELENGTH CONVERTING MATERIAL FOR A LIGHT EMITTING DEVICE
20170324008 · 2017-11-09 ·

Embodiments of the invention include a wavelength-converting material defined by AE.sub.3−x1−y+zRE.sub.3−x2+y−z[Si.sub.9-wAl.sub.w(N.sub.1−yC.sub.y).sup.[4](N.sub.16−z−wO.sub.z+w).sup.[12]]Eu.sub.x1,Ce.sub.x2, where AE=Ca, Sr, Ba; RE=Y, Lu, La, Sc; 0≦x1≦0.18; 0≦x2≦0.2; x1+x2 >0; 0≦y≦1; 0≦z≦3; 0≦w≦3.

SINTERED PHOSPHOR, LIGHT EMITTING DEVICE, ILLUMINATION DEVICE, VEHICLE HEADLAMP, AND METHOD FOR MANUFACTURING SINTERED PHOSPHOR

Provided is a sintered phosphor-composite for an LED, having high heat resistance, high thermal conductivity, high luminance, and high conversion efficacy. In addition, there are provided: a light-emitting apparatus which uses the sintered phosphor-composite; and an illumination apparatus and a vehicular headlamp which use the light-emitting apparatus. The sintered phosphor-composite includes a nitride phosphor and a fluoride inorganic binder. The sintered phosphor-composite preferably has an internal quantum efficiency of 60% or more when excited by blue light having a wavelength of 450 nm. Further, the sintered phosphor-composite preferably has a transmittance of 20% or more at a wavelength of 700 nm.

Compound of phosphor and the manufacturing method thereof
09765258 · 2017-09-19 · ·

Provided is a metal oxonitridosilicate phosphor of a general formula M.sub.5−z−a−bAl.sub.3+xSi.sub.23−xN.sub.37−x−2aO.sub.x+2a:Eu.sub.z,Mn.sub.b, wherein M is one or more alkaline earth metals; 0custom character; 0custom character; 0<z≦custom character; and 0<b≦custom character.

Narrow band emitting SiAlON phosphor

This specification discloses a method of enhancing the stability and performance of Eu.sup.2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr.sub.4C.sub.4 crystal structure type and having a composition of AE.sub.1−xLi.sub.3−2yAl.sub.1+2y−zSi.sub.zO.sub.4−4y−zN.sub.4y+z:EU.sub.x(AE=Ca, Sr, Ba; 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O).sup.+ by (Si,N).sup.+ reduces the concentration of unwanted Eu.sup.3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Oxynitride phosphor powder, silicon nitride powder for production of oxynitride phosphor powder, and production method of oxynitride phosphor powder

An oxynitride phosphor powder contains α-SiAlON and aluminum nitride, obtained by mixing a silicon source, an aluminum source, a calcium source, and a europium source to produce a composition represented by a compositional formula: Ca.sub.x1Eu.sub.x2Si.sub.12−(y+z)Al.sub.(y+z)O.sub.zN.sub.16−z (wherein x1, x2, y and z are 0<x1≦3.40, 0.05≦x2≦0.20, 4.0≦y≦7.0, and 0≦z≦1), and firing the mixture.

Core-shell fluorescent material and a light source device including the same

A core-shell fluorescent material and a light source device using the same are disclosed. The core-shell fluorescent material includes a core and a shell for generating an emitting light with wavelength within 520 and 800 nm after absorbing an exciting light with wavelength within 370 and 500 nm. The core may include yellow, green or red fluorescent powder, and the shell includes manganese (IV)-doped fluoride compound. The light source device generally includes the core-shell fluorescent material, a radiation source, leads and a package. The leads provide current to the radiation source and cause the radiation source to emit radiation. The core-shell fluorescent material is coated on the package for receiving the radiation so as to generate a high quality emission served as the desired light source for the field of lighting and displaying.

Packaged White Light Emitting Devices Comprising Photoluminescence Layered Structure
20210408342 · 2021-12-30 ·

A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Phosphor, light-emitting device, image display device, and illumination device

Provided is a phosphor that includes a crystal phase represented by the following Formula [1] and has a microstrain of 0.049% or less as calculated by the Halder-Wagner method: Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e [1] (wherein, a, b, c, d, and e represent values satisfying the following respective ranges: 0<a≤0.2, 5.6<b≤5.994, 0.006≤c<0.4, b+c=6, 0.006≤d<0.4, and 7.6<e≤7.994).