One aspect of the disclosure provides an optical wavelength conversion member including a polycrystalline ceramic sintered body containing, as main components, Al.sub.2O.sub.3 crystal grains and crystal grains represented by formula (Y,A).sub.3B.sub.5O.sub.12:Ce. In the optical wavelength conversion member, a (Y,A).sub.3B.sub.5O.sub.12:Ce crystal grain has a region wherein the A concentration of a peripheral portion of the (Y,A).sub.3B.sub.5O.sub.12:Ce crystal grain is higher than that of an interior portion of the (Y,A).sub.3B.sub.5O.sub.12:Ce crystal grain. Thus, the optical wavelength conversion member exhibits high fluorescence intensity (i.e., high emission intensity) and high heat resistance (i.e., low likelihood of temperature quenching). The optical wavelength conversion member has a structure wherein the element A concentration of a peripheral portion of a (Y,A).sub.3B.sub.5O.sub.12:Ce crystal grain differs from that in an interior portion of the crystal grain. This structure can achieve a ceramic fluorescent body exhibiting superior fluorescent characteristics and superior thermal characteristics with varied colors of emitted light.

Codoped lutetium-based oxyorthosilicate scintillators (e.g., lutetium oxyorthosilicase (LSO) and lutetium-ytrrium oxyorthosilicate (LYSO) scintillators) codoped with transition metal ions (e.g., Cu.sup.2+) are described. The codoping can alter one or more optical and/or scintillation property of the scintillator material. For example, the codoping can increase scintillation light yield and/or decrease scintillation decay time. Radiation detectors comprising the scintillators, methods of detecting high energy radiation using the radiation detectors, and methods of altering one or more scintillation and/or optical properties of a lutetium-based oxyorthosilicate scintillator are also described.

Provided is a ceramic composite material and a wavelength converter. The ceramic composite material includes: an alumina matrix, a fluorescent powder uniformly distributed in the alumina matrix, and scattering centers uniformly distributed in the alumina matrix, wherein the alumina matrix is an alumina ceramics, the scattering centers are alumina particles, the alumina particles each have a particle diameter of 1 μm to 10 μm, and the fluorescent powder has a particle diameter of 13 μm to 20 μm.

A fluorescent plate includes a fluorescent phase which emits fluorescence by excitation light, and a plurality of voids. The plurality of voids include a plurality of particular voids having an equivalent circle diameter of 0.4 micrometers or greater and 50 micrometers or smaller. In a cross section of the fluorescent plate, the ratio of the number of the particular voids having a circularity greater than 0.6 and 1 or less to the total number of the plurality of particular voids is 50% or greater.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

A wavelength conversion device includes a wavelength conversion plate, a reflective layer, a driving component and a thermal conductive layer. The wavelength conversion plate includes a lateral edge, at least one surface and a conversion region. The reflective layer is disposed on the surface of the wavelength conversion plate. The driving component is disposed near the lateral edge of the wavelength conversion plate and configured to displace the wavelength conversion plate. The thermal conductive layer is disposed on the surface of the wavelength conversion plate and thermally connected to the conversion region for conducting heat generated by the conversion region during a wavelength conversion. By disposing the thermal conductive layer on the surface of the wavelength conversion plate, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

Provided is a wavelength converting composite member including: a disk-shaped substrate; a first wavelength converting member provided on the substrate and containing a first phosphor that radiates fluorescence due to a parity-forbidden transition; and a second wavelength converting member provided on the substrate and containing a second phosphor that radiates fluorescence due to a parity-allowed transition. The first wavelength converting member and the second wavelength converting member are disposed adjacent to each other along the circumferential direction of the substrate. The first wavelength converting member and the second wavelength converting member are provided on the substrate in such a way that the position of the center of gravity of the entirety of the first wavelength converting member and the second wavelength converting member is located on the rotation axis of the substrate. A light emitting device is provided with the wavelength converting composite member.

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 μm≤R≤40 μm; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as r.sub.inner.