A curable composition for production of coatings with an antimicrobial property contains at least one film-forming polymer, at least one up-conversion phosphor, optionally, at least one additive, and optionally, at least one curing agent. The phosphor is selected from the idealized general formula (I), A.sub.1-x-y-zB*.sub.yB.sub.2SiO.sub.4:Ln.sup.1.sub.x,Ln.sup.2.sub.z,, where x=0.0001-0.05, z=0 or z=0.0001 to 0.3, and y=x+z; A is selected from Mg, Ca, Sr, and Ba; B is selected from Li, Na, K, Rb, and Cs; B* is selected from Li, Na, and K; where B is the same as B* or B is not the same as B*, and B and B* are preferably not the same; Ln.sup.1 is selected from praseodymium (Pr), erbium (Er), and neodymium (Nd); and Ln.sup.2 is optionally selected from gadolinium (Gd).

A phosphor composed by containing Ce.sup.3+ as a light emission center in a matrix garnet compound having a garnet structure. The matrix garnet compound is a solid solution composed of two or more end members, and the end members include Lu.sub.2CaMg.sub.2(SiO.sub.4).sub.3 as a first end member. It is preferable that the matrix garnet compound is a compound containing Al. A light emitting device uses the phosphor 2 and includes a solid-state light emitting device 117. The phosphor 2 is excited by light radiated by the solid-state light emitting device 117.

A light-emitting apparatus includes: a first phosphor layer including a first phosphor composed of an inorganic phosphor activated by Ce.sup.3+; and a second phosphor layer including a second phosphor composed of an inorganic phosphor activated by Ce.sup.3+ and different from the first phosphor. The second phosphor layer is provided so as to be spaced apart from the first phosphor layer. The light-emitting apparatus further includes: an optical filter provided between the first phosphor layer and the second phosphor layer; and an excitation source that emits light that excites at least one of the first phosphor and the second phosphor. The second phosphor has light absorption characteristics of absorbing at least a part of first fluorescence emitted by the first phosphor. The optical filter reflects at least a part of the first fluorescence emitted by the first phosphor, and allows passage of second fluorescence emitted by the second phosphor.

The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1−x−z)X.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1−x−Z)Ce.sub.2xZ.sub.2zSiO.sub.5+z/2O.sub.2↑ or (1−x−y−z)X.sub.2O.sub.3+yY.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1−x−y−z)Y.sub.2yCe.sub.2xZ.sub.2zSiO.sub.5+x/20.sub.2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)x.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1-x-Z)Ce.sub.2xZ.sub.2zSiO.sub.5+x/2O.sub.2↑ or (1-x-y-z)X.sub.2O.sub.3+yY.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1-x-y-z)Y.sub.2yCe.sub.2xZ.sub.2zSiO.sub.5+x/2O.sub.2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

A scintillation compound can include a rare earth element that is in a divalent (RE.sup.2+) or a tetravalent state (RE.sup.4+). The scintillation compound can include another element to allow for better change balance. The other element may be a principal constituent of the scintillation compound or may be a dopant or a co-dopant. In an embodiment, a metal element in a trivalent state (M.sup.3+) may be replaced by RE.sup.4+ and a metal element in a divalent state (M.sup.2+). In another embodiment, M.sup.3+ may be replaced by RE.sup.2+ and M.sup.4+. In a further embodiment, M.sup.2+ may be replaced by a RE.sup.3+ and a metal element in a monovalent state (M.sup.1+). The metal element used for electronic charge balance may have a single valance state, rather than a plurality of valence states, to help reduce the likelihood that the valance state would change during formation of the scintillation compound.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)X.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1-x-z)Ce.sub.2xZ.sub.2zSiO.sub.5+x/2O.sub.2 or (1-x-y-z)X.sub.2O.sub.3+yY.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1-x-y-z)Y.sub.2yCe.sub.2xZ.sub.2zSiO.sub.5+x/2O.sub.2; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.