The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition R.sub.wQ.sub.xSi.sub.yN.sub.z, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Embodiments of the invention are directed to a luminescent ceramic including a first phase and a second phase. The first phase is R.sub.3−x−y−z+w2A.sub.1.5x+y−w2M.sub.zSi.sub.6−w1−w2Al.sub.w1−w2N.sub.11−y−w1O.sub.y+w1. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm. The second phase may be or comprise, for example, RE.sub.3ASi.sub.5N.sub.9O.sub.2 and RESi.sub.3N.sub.5, wherein RE is at least one rare-earth element selected from the group consisting of La, Gd, Lu, Y, Ce and Sc and wherein A is at least one metal element selected from the group consisting of Ba, Sr, Ca, Mg, Zn and Eu.

A method of manufacturing nanoparticles of a photoluminescent material, including the successive steps of: a) forming nanometer-range particles of said photoluminescent material; b) forming a dispersion containing the particles in a non-aqueous solvent, the dispersion further containing at least one surface agent; c) placing the dispersion in an autoclave at a pressure in the range from 2 MPa to 100 MPa; and d) recovering the particles.

A solution composition comprising a conductive polymer, a resin, and a solvent is described. The solution composition has an acid value of 0.0 to 14.5 mgKOH/g or a base value of 0.0 to 1.0 mgHCl/g. The solution composition may be applied to a surface such as a steel surface and dried to obtain a film. The obtained film may be used for rust inhibition.

A wavelength conversion member includes a support and a wavelength conversion layer including a first phosphor having a composition represented by Formula (1) and having an emission peak wavelength in a range from 550 nm to 620 nm, and a second phosphor having a different emission peak wavelength and/or a full width at half maximum from the first phosphor. An amount of the first phosphor in the wavelength conversion layer is in a range from 20 mass % to 80 mass % relative to a total amount of the phosphors In Formula (1), M.sup.1 represents at least one of rare earth elements other than La and Ce, a total molar content percentage of Y, Gd, and Lu in M.sup.1 is 90% or more, and p, q, r, and s satisfy 2.7≤(p+q+r)≤3.3, 0≤r≤1.2, 10≤s≤12, and 0<q≤1.2.

Provided is a method for producing a nitride phosphor. The method includes obtaining a first heat-treated product having a crystallite diameter of not less than 150 nm by subjecting a compound containing at least one rare-earth element selected from the group consisting of Y, La, Ce, Lu, and Gd to heat treatment at a temperature within a range of 800° C. to 1800° C.; and obtaining a second heat-treated product by subjecting a mixture containing the first heat-treated product and a raw material contained as required to heat treatment at a temperature within a range of 1200° C. to 1800° C. The raw material contains an M source containing at least one rare-earth element M selected from the group consisting of Y, Lu, and Gd; an La source; an Si source; and a Ce source. The mixture is prepared with the raw materials such that a fed composition is represented by a Formula of La.sub.wM.sub.xSi.sub.6N.sub.y:Ce.sub.z. In this Formula, w, x, y, and z satisfy 0.5≤w≤4.5, 0<x≤1.5, 0≤y≤12, 0<z≤1.5, 0.15<(x+z)<3.0, and 3.0≤(w+x+z)≤7.5.

Provided is a fluorescent material with high brightness. The fluorescent material includes a nitride fluorescent material comprising La, Ce, Si, and N; and a first phosphorus compound disposed on a surface of the nitride fluorescent material. The first phosphorus compound includes at least one selected from the group consisting of lanthanum phosphate, lanthanum hydrogen phosphate, and hydrates thereof. A content of phosphorus atoms in the fluorescent material is 0.07% by mass or higher and 0.8% by mass or lower.

The disclosure provides an LED white light device, including a blue light chip and phosphors. The blue light chip has a band of (455-470) nm. The phosphors include a dual-band yellow phosphor and a red phosphor having an excited light peak wavelength range of (610-660) nm. The yellow phosphor and the red phosphor are mixed according to a proportion of 1:(0.03-0.2) and cover the blue light chip, such that blue light emitted by the packaged LED white light device has a peak wavelength range of (450-465) nm. The disclosure also provides a preparation method of an LED white light device and an LED backlight module adopting the above LED white light device. The disclosure achieves the effects of blue light prevention, high color gamut and pure white simultaneously, Color uniformity and consistency are good, and a blue-green-red three-color continuous spectrum is provided, which is closer to a solar spectrum.

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO.sub.2, 4.3 to 20% B.sub.2O.sub.3, 0 to 25% Al.sub.2O.sub.3, 0 to 3% Li.sub.2O, 0 to 3% Na.sub.2O, 0 to 3% K.sub.2O, 0 to 3% Li.sub.2O+Na.sub.2O+K.sub.2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 5% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphoric acid chloride phosphor.

Provided is a nitride phosphor having two or more maximum absorption points in a range of 3,200 to 3,300 cm.sup.−1 in an infrared absorption (FT-IR) spectrum. The nitride phosphor of the present invention has excellent emission characteristics and is highly reliable when used in devices.