Provided are a method of manufacturing a multi-component semiconductor nanocrystal, a multi-component semiconductor nanocrystal manufactured by the method, and a quantum dot including the same. The method includes irradiating microwaves to a semiconductor nanocrystal synthesis composition, and the semiconductor nanocrystal synthesis composition includes a precursor including a Group I element, a precursor including a Group II element, a precursor including a Group III element, a precursor including a Group V element, a precursor including a Group VI element, or any combination thereof.

A bi-phased approach between good solvents (or non-polar) and bad solvents (polar) can be used to assemble nanorods into highly ordered monolayers or multilayers of ordered nanorod arrays. These ordered nanorod arrays can display unique optical properties. For example, ordered arrays of CdSe/CdS core/shell nanorods were assembled that display polarized photoluminescence.

A quantum dot composition, including a first quantum dot and a second quantum dot, wherein a valence band maximum energy level of the first quantum dot is different from a valence band maximum energy level of the second quantum dot, as determined by ambient photoelectron spectroscopy, and an energy band gap of the first quantum dot is identical to an energy band gap of the second quantum dot, as determined by ultraviolet-visible spectroscopy.

A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

A light emitting material includes: luminescent nanoparticles; and an ionic crystal containing an anionic component represented by formula (1) below. In the formula, R.sup.1 and R.sup.2 each independently denote a fluorine atom or a fluoroalkyl group, or R.sup.1 and R.sup.2 each denote a fluoroalkylene group to be connected to each other to form a ring. ##STR00001##

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

A composition contains quantum dots (A) and a resin (B), wherein the resin (B) contains a polymer (B1) having a sulfide group, a carboxyl group, and an unsaturated double bond.

A light emitting component comprising a light source (10) for emitting blue light (aa), a first layer (1) comprising a red phosphor, and a second layer (2) comprising luminescent crystals (20). Upon absorption of the light emitted by the light source (10), the luminescent crystals (20) emit light of a wavelength in the green light spectrum (cc). The first layer (1) is arranged adjacent to the light source (10). The second layer (2) is arranged remotely from the first layer (1).

A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d.sub.5/2 as an area percentage is less than or equal to about 25%.