ROSH compliant mixed quantum dot films are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

A light-emitting element includes: a cathode; an anode; a light-emitting layer provided between the cathode and the anode and containing quantum dots; an electron-transport layer provided between the light-emitting layer and the cathode; and a hole-transport layer provided between the light-emitting layer and the anode. The light-emitting layer includes a first light-emitting layer containing first quantum dots to which first ligands are coordinated, and further includes a second light-emitting layer provided closer to the electron-transport layer than to the first light-emitting layer, and containing second quantum dots to which second ligands are coordinated. A dipole moment of the first ligands is larger than a dipole moment of the second ligands.

A quantum dot includes crystalline nanoparticle, wherein the quantum dot has a multi-layer structure including core particle and a plurality of layers on the core particle, and has Zn, S, Se, and Te as constituent elements, and the quantum dot has at least one quantum well structure in a radial direction from the center of the quantum dot. Therefore, quantum dots, which are crystalline nanoparticles, which do not contain harmful substances such as Cd and Pb, have excellent light emission characteristics such as half-value width at half maximum, and have high quantum efficiency.

Provided is a semiconductor nanoparticle-containing composition capable of forming a wavelength conversion layer that efficiently converts the wavelength of excitation light and exhibits sufficient luminescence intensity. An aspect of the semiconductor nanoparticle-containing composition of the present invention contains semiconductor nanoparticles (A) and a coloring matter (B) and further contains a polymerizable compound (C), in which the semiconductor nanoparticles (A) have a maximum emission wavelength in the range of 500 to 670 nm over a wavelength range of 300 to 780 nm, and the coloring matter (B) contains at least one selected from coloring matters (B1) to (B5) having specific structures.

A quantum dot-containing composition includes a quantum dot, a ligand having coordinating groups, which coordinates to the surface of the quantum dots, and the ligand is represented by Formula I. ##STR00001##
In Formula I, A is an organic group including one or more coordinating groups selected from an amino group, a carboxy group, a mercapto group, a phosphine group, and a phosphine oxide group, Z is an (n+m+l)-valent organic linking group, R is a group including an alkyl group, an alkenyl group, or an alkynyl group each of which may have a substituent, Y is a group having a polymer chain which has a degree of polymerization of 3 or greater and which includes a polyacrylate skeleton or the like. n and m are each independently 1 or greater, l is 0 or greater, and n+m+l is integer 3 or greater. At least two coordinating groups are included in a molecule.

Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.

The present disclosure relates to a quantum dot and a preparation method for the same, and a photoelectric device. The quantum dot includes a core and a shell layer coating the core, a material of the core is CdZnSe, and a material of the shell layer is CdZnS, wherein, a molar ratio of Cd element with respect to S element in the shell layer is from 0.15:1 to 0.4:1.

A core-shell type quantum dot comprising, a semiconductor nanocrystal core including at least In and P, and having group III-V elements as constituent elements and a single or a plurality of semiconductor nanocrystal shells having group II-VI elements as constituent elements covering the semiconductor nanocrystal core, wherein a buffer layer comprising semiconductor nanocrystals having group II-V elements as constituent elements is included between the semiconductor nanocrystal core and the semiconductor nanocrystal shell. As a result, quantum dots using group II-V semiconductor nanocrystals as a core and having improved fluorescence emission efficiency are provided.

A wavelength converter material and a method of A method of preparing a wavelength converter material may include providing an optionally oxide coated phosphor material, mixing the optionally oxide coated phosphor material with an optionally oxide coated paramagnetic nanoparticle, coating the optionally oxide coated phosphor material and the optionally oxide coated paramagnetic nanoparticle with an oxide coating, thereby preparing a coated phosphor-nanoparticle particle, and separating the coated phosphor-nanoparticle particle, thereby preparing a wavelength converter material. The separating of the coated phosphor-nanoparticle particle may be manipulated by applying a magnetic field.

Furthermore, a wavelength converter material, as well as a light emitting diode are described herein.

A light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a plurality of quantum dots and metal carboxylate having at least one hydrocarbon group of at least one carbon atoms, and the plurality of quantum dots includes a first organic ligand, and does not include cadmium and lead, and a method of manufacturing the same.