A solid hard surface cleaning composition suitable for replacing liquid formulations while providing at least equivalent or enhanced cleaning performance, including at lower concentrations, is provided. The solid hard surface cleaning compositions include alkali metal carbonate alkalinity source(s), aminocarboxylic acid chelant(s), amphoteric surfactant(s), polyacrylate polymer(s) and anionic surfactant(s). The solid hard surface cleaning compositions can include additional functional ingredients, such as corrosion inhibitors. The solid hard surface cleaning compositions do not include hydroxide alkalinity and beneficially provide stable ready-to-use formulations that are safe for contact without the use of personal protective equipment (PPE) and are compatible with soft metals.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

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A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

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Polishing compositions are disclosed for simultaneously removing particles from a surface that has been polished using a CMP slurry comprising a polishing rate accelerator and removing a pad stain from a polishing pad that has been contacted with a CMP slurry comprising a polishing rate accelerator.

Cleaning compositions for post-CMP cleaning of semiconductor surfaces, comprise one or more reducing agents, a particle removal agent, a surfactant, and a base. When one or more reducing agents yields a standard reduction potential of less than 1.224 V, the cleaning composition of the present disclosure is able to remove a MnO.sub.2 pad stain from a polishing pad and reduce defects on a polished surface (by removing particles).

An object of the present invention is to provide a method for producing a treatment liquid, having excellent filterability.

The method for producing a treatment liquid of an embodiment of the present invention is a method for producing a treatment liquid, the method including filtering an object to be purified including a surfactant, using a first filter having a first filter medium, to produce a treatment liquid for a semiconductor substrate, in which the first filter medium includes at least one selected from the group consisting of a nylon, a polyallyl sulfonic acid, a perfluoroalkoxy alkane which has been subjected to a hydrophilization treatment, a polytetrafluoroethylene which has been subjected to a hydrophilization treatment, a polyolefin which has been subjected to a hydrophilization treatment, and a polyvinylidene fluoride which has been subjected to a hydrophilization treatment, and the surfactant includes at least one selected from the group consisting of a nonionic surfactant including a group represented by Formula (1) and an anionic surfactant including a group represented by Formula (1).

Formula (1) (LO).sub.n

L represents an alkylene group, and n represents 3 to 55.

A low-pH automatic dishwashing detergent composition having a pH as measured in 1% weight aqueous solution at 25° C. of from about 5 to about 7.5 including a mixture of metalloproteases.

The invention relates to stable, anhydrous concentrated cleanser formulations.

A cleaner useful in removing undesirable polymeric material deposits adhered within small bore holes of electronic components is provided, as well as apparatus and methods for carrying out cleaning of such components.

Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.