The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

Methods of fabricating objects using additive manufacturing are provided. The methods create in situ dispersoids within the object. The methods are used with refractory alloy powders which are pretreated to increase the oxygen content to between 500 ppm and 3000 ppm or to increase the nitrogen content to between 250 ppm and 1500 ppm. The pretreated powders are then formed into layers in an environmentally controlled chamber of an additive manufacturing machine. The environmentally controlled chamber is adjusted to have between 500 ppm and 200 ppm oxygen. The layer of pretreated powder is then exposed to a transient moving energy source for melting and solidifying the layer; and creating in situ dispersoids in the layer.

A method for vacuum heat treating Nb, such as is used in superconducting radio frequency cavities, to engineer the interstitial oxygen profile with depth into the surface to conveniently optimize the low-temperature rf surface resistance of the material. An example application is heating of 1.3 GHz accelerating structures between 250-400° C. to achieve a very high quality factor of 5×10.sup.10 at 2.0 K. With data supplied by secondary ion mass spectrometry measurements, application of oxide decomposition and oxygen diffusion theory was applied to quantify previously unknown parameters crucial in achieving the oxygen alloy concentration profiles required to optimize the rf surface resistance. RF measurements of vacuum heat treated Nb superconducting radio frequency cavities confirmed the minimized surface resistance (higher Q.sub.0) previously expected only from 800° C. diffusive alloying with nitrogen.

A method of processing a substrate, includes: (a) modifying a surface of the substrate into a first oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a first processing gas in which oxygen and hydrogen are contained and a ratio of hydrogen in the oxygen and hydrogen of the first processing gas is a first ratio; and (b) modifying the first oxide layer into a second oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a second processing gas in which oxygen is contained and hydrogen is optionally contained and a ratio of hydrogen in the oxygen and hydrogen of the second processing gas is a second ratio smaller than the first ratio.

A method of processing a substrate, includes: (a) modifying a surface of the substrate into a first oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a first processing gas in which oxygen and hydrogen are contained and a ratio of hydrogen in the oxygen and hydrogen of the first processing gas is a first ratio; and (b) modifying the first oxide layer into a second oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a second processing gas in which oxygen is contained and hydrogen is optionally contained and a ratio of hydrogen in the oxygen and hydrogen of the second processing gas is a second ratio smaller than the first ratio.

A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

An antimicrobial and adhesion-proof titanium tableware and a manufacturing method of the same are provided. The antimicrobial and adhesion-proof titanium tableware is made of a titanium substrate, and includes a contact portion and an oxidation layer structure. The contact portion is used for contacting foods, food ingredients, drinking water, beverages, or body parts of a user. The oxidation layer structure is formed on one part of a surface of the titanium substrate corresponding to the contact portion. The titanium substrate is made of titanium in α phase, and the oxidation layer structure is a titanium dioxide film in a rutile crystalline form. The oxidation layer structure has a roughened surface and an oxygen diffusion layer formed at an interface of the oxidation layer structure and the titanium substrate.

An antimicrobial and adhesion-proof titanium tableware and a manufacturing method of the same are provided. The antimicrobial and adhesion-proof titanium tableware is made of a titanium substrate, and includes a contact portion and an oxidation layer structure. The contact portion is used for contacting foods, food ingredients, drinking water, beverages, or body parts of a user. The oxidation layer structure is formed on one part of a surface of the titanium substrate corresponding to the contact portion. The titanium substrate is made of titanium in α phase, and the oxidation layer structure is a titanium dioxide film in a rutile crystalline form. The oxidation layer structure has a roughened surface and an oxygen diffusion layer formed at an interface of the oxidation layer structure and the titanium substrate.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.