A method for forming a metallization structure is provided, including forming a metallic powder layer on a substrate; performing a first laser sintering on a first portion of the metallic powder layer to form a metal layer; and in the presence of oxygen, performing a second laser sintering on a second portion of the metallic powder layer to form a metal oxide layer to serve as a first dielectric layer.

A method for forming a metallization structure is provided, including forming a metallic powder layer on a substrate; performing a first laser sintering on a first portion of the metallic powder layer to form a metal layer; and in the presence of oxygen, performing a second laser sintering on a second portion of the metallic powder layer to form a metal oxide layer to serve as a first dielectric layer.

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Embodiments of the present invention relate generally to methods of treating metal surfaces to enhance adhesion or binding to substrates, and devices formed thereby. In some embodiments of the present invention, methods of achieving improved bonding strength without roughening the topography of a metal surface are provided. The metal surface obtained by this method provides strong bonding to resin layers. The bonding interface between the treated metal and the resin layer exhibits resistance to heat, moisture, and chemicals involved in post-lamination process steps, and therefore can suitably be used in the production of PCB's. Methods according to some embodiments of the present invention are especially useful in the fabrication of high density multilayer PCB's, in particular for PCB's having circuits with line/spacing of equal to and less than 10 microns. Methods according to other embodiments of the present invention are particularly useful in the coating of metal surfaces in a wide variety of applications.

Embodiments of the present invention relate generally to methods of treating metal surfaces to enhance adhesion or binding to substrates, and devices formed thereby. In some embodiments of the present invention, methods of achieving improved bonding strength without roughening the topography of a metal surface are provided. The metal surface obtained by this method provides strong bonding to resin layers. The bonding interface between the treated metal and the resin layer exhibits resistance to heat, moisture, and chemicals involved in post-lamination process steps, and therefore can suitably be used in the production of PCB's. Methods according to some embodiments of the present invention are especially useful in the fabrication of high density multilayer PCB's, in particular for PCB's having circuits with line/spacing of equal to and less than 10 microns. Methods according to other embodiments of the present invention are particularly useful in the coating of metal surfaces in a wide variety of applications.

A manufacturing method of a grain-oriented electrical steel sheet according to an embodiment of the present invention includes: manufacturing a cold-rolled sheet; forming a groove in the cold-rolled sheet; removing an Fe—O oxide formed on a surface of the cold-rolled sheet; primary recrystallization annealing the cold-rolled sheet; and applying an annealing separating agent to the primary recrystallized cold-rolled sheet, and secondary recrystallization annealing it, wherein a close contacting property coefficient calculated by Formula 1 below is 0.016 to 1.13.

close contacting property coefficient (S.sub.ad)=(0.8×R)/H.sub.hill-up  [Formula 1] (In Formula 1, R represents the average roughness (μm) of the surface of the cold-rolled sheet after the removing of the oxide, and H.sub.hill-up represents the average height (μm) of the hill-up present on the surface of the cold-rolled sheet after the removing of the oxide.)

Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.