Patent classifications
C23C14/165
Nanoparticle coating method
The present invention provides a method for producing a magnetic nanoparticle-coated laminate material. The method comprises coating a pair of opposed surfaces of a plurality of steel or iron/cobalt (Fe/Co) alloy film portions with a magnetic nanoparticle-containing coating. Each magnetic nanoparticle comprises a core and a shell covering at least a portion of the core. The shell and core are made of different materials selected from one or more of: iron, cobalt, nickel; and/or alloys comprising two or more of: iron, cobalt and/or nickel; and/or magnetic rare earth metals; and/or diamagnetic transition metals. The method further comprises stacking the coated film portions on top of each other such that a or each coated surface of each film portion is located adjacent a further coated surface of an adjacent film portion; and compressing the stacked coated film portions together to form a nanoparticle-coated laminate material.
High performance solid lubricating titanium amorphous alloy
The present invention relates to an amorphous alloy having low frictional resistance and capable of improving abrasion resistance, a target made of the amorphous alloy, and a compressor comprising a layer of the amorphous alloy as a coating layer. According to the present invention, it is possible to secure high hardness and a low elastic modulus of the coating layer by controlling a microstructure having an amorphous phase as a primary phase by using Ti-based three-component to five-component amorphous alloys. As a result, it is possible to prevent the coating layer from being peeled off from a matrix or destroyed, and thus it is possible to achieve the effect of improving reliability or durability of a mechanical apparatus such as a compressor.
Multicathode deposition system
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising one or more of contours that reduce particle defects, temperature control and or measurement and and/or voltage particle traps to reduce processing defects.
CORROSION-RESISTANT MEMBER
A corrosion-resistant member including: a metal base material (10); a corrosion-resistant coating (30) formed on the surface of the base material (10); and a buffer layer (20) formed between the base material (10) and the corrosion-resistant coating (30). The base material (10) contains a main element having the highest mass content ratio among elements contained in the base material (10) and a trace element having a mass content ratio of 1% by mass or less. The corrosion-resistant coating (30) contains at least one kind selected from magnesium fluoride, aluminum fluoride, and aluminum oxide. The buffer layer (20) contains an element of the same kind as the trace element, and the content ratio obtained by energy dispersive X-ray analysis of the element of the same kind as the trace element contained in the buffer layer (20) is 2% by mass or more and 99% by mass or less.
System and method to control PVD deposition uniformity
A physical vapor deposition chamber comprising a rotating substrate support having a rotational axis, a first cathode having a radial center positioned off-center from a rotational axis of the substrate support is disclosed. A process controller comprising one or more process configurations selected from one or more of a first configuration to determine a rotation speed (v) for a substrate support to complete a whole number of rotations (n) around the rotational axis of the substrate support in a process window time (t) to form a layer of a first material on a substrate, or a second configuration to rotate the substrate support at the rotation speed (v).
SUBTRACTIVE METALS AND SUBTRACTIVE METAL SEMICONDUCTOR STRUCTURES
Embodiments of the present disclosure generally relate to subtractive metals, subtractive metal semiconductor structures, subtractive metal interconnects, and to processes for forming such semiconductor structures and interconnects. In an embodiment, a process for fabricating a semiconductor structure is provided. The process includes performing a degas operation on the semiconductor structure and depositing a liner layer on the semiconductor structure. The process further includes performing a sputter operation on the semiconductor structure, and depositing, by physical vapor deposition, a metal layer on the liner layer, wherein the liner layer comprises Ti, Ta, TaN, or combinations thereof, and a resistivity of the metal layer is about 30 μΩ.Math.cm or less.
SPUTTERING DEVICE
A sputtering device includes a reaction chamber, a thimble mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The thimble mechanism is arranged in the reaction chamber. The thimble mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the thimble mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.
Thermocycling system, composition, and microfabrication method
A system and method of manufacture for the system, comprising a set of heater-sensor dies, each heater-sensor die comprising an assembly including a first insulating layer, a heating region comprising an adhesion material layer coupled to the first insulating layer and a noble material layer, and a second insulating layer coupled to the heating region and to the first insulating layer through a pattern of voids in the heating region, wherein the pattern of voids in heating region defines a coarse pattern associated with a heating element of the heating region and a fine pattern, integrated into the coarse pattern and associated with a sensing element of the heating region; an electronics substrate configured to couple heating elements and sensing elements of the set of heater-sensor dies to a controller; and a set of elastic elements configured to bias each of the set of heater-sensor dies against a detection chamber.
Method for preparing a conductive, transparent and flexible membrane
The technique relates to a method for preparing a nanomesh metal membrane 5 transferable on a very wide variety of supports of different types and shapes comprising at least one step of de-alloying 1 a thin layer 6 of a metal alloy deposited on a substrate 7, said method being characterized in that said thin layer 6 has a thickness less than 100 nm, and in that said de-alloying step 1 is carried out by exposing said thin layer 6 to an acid vapor in the gas phase 8, in order to form said nanomesh metal membrane 5.
HIGH PERFORMANCE TOOL COATING FOR PRESS HARDENING OF COATED AND UNCOATED ULTRAHIGH STRENGTH STEEL SHEET METALS
Coated tool for hot stamping of coated or uncoated sheet metals, in particular for hot stamping of AlSi- or Zn-coated sheet metals.sub.[KM2], comprising a coated substrate surface to be in contact with the coated or uncoated metal sheet, wherein the coating in the coated substrate surface is a multi-layer coating comprising one or more inferior layers and one or more superior layers, where the inferior layers are deposited closer to the substrate surface than the superior layers, whereas: —the inferior layers are designed for providing load bearing capacity, —the superior layers are designed for providing galling resistance, —at least one superior layer (layer 5) is deposited having a multi-nanolayer structure formed by sublayers of the type A, B and C, said three kind of sublayers being nanolayers deposited alternate one on each other forming a sequence of the type . . . A/B/C/A/B/C/A . . . , wherein at least two sequences of one A nanolayer, one B nanolayer and one C nanolayer are deposited forming the multi-nanolayer structure wherein: —the nanolayer of type A is composed in at least 90 at.-% of chromium and nitrogen, —the nanolayer of type B is composed in at least 90 at.-% of titanium, aluminum and nitrogen, —the nanolayer of type C is composed I at least 90 at.-% of vanadium carbon and nitrogen, and —the layer thickness of the at least one superior layer (layer 5) is not lower than 0.5 μm and not higher than 15 μm.