The invention relates to a method for producing a multi-layer sliding bearing element (1), according to which, in a chamber of a cathode sputtering installation a metal layer is deposited on a substrate by means of cathode sputtering of at least one target, said method comprising the steps: introducing a substrate into the chamber of the cathode sputtering installation; ion etching of the surface of the substrate to be coated by ion bombardment, whereby substrate particles are removed from the surface of the substrate; depositing the metal layer on the substrate, whereto target particles are produced from at least one target that is connected as the cathode, said particles being settled on the substrate. In the step of ion etching of the substrate, the target is connected as the anode and at least some of the substrate particles are deposited on the target. The polarity of the target is then reversed for the deposition of the metal layer on the surface of the substrate.

Provided is a technique of forming an aluminum film that has high flatness and less cavities. Step S11 is forming a first film having a thickness that is equal to or greater than 0.1 μm and less than 1 μm, by sputtering a material onto a substrate. Step S12 is reflowing the first film by heating the first film. Step S13 is forming a second film by sputtering the material onto the first film that has been reflowed. Step S14 is reflowing the second film by heating the second film. Step S15 is forming a third film by sputtering the material onto the second film that has been reflowed. Step S16 is reflowing the third film by heating the third film.

Switch assemblies and switching methods are disclosed. In some embodiments, a switch assembly may include a first blade having a first contact within an enclosed cavity, and a second blade having a second contact within the enclosed cavity. The first and second contacts are operable to make or break contact with one another in response to a magnetic field. The switch assembly may further include a coating formed over each of the first and second contacts, the coating including a titanium layer, a second layer formed over the titanium layer, and a tungsten-copper layer formed over the second layer. In some embodiments, the second layer is copper or molybdenum.

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

A method of coating a component includes attaching the component to a support that is configured to hold a plurality of components and placing a base of the support in a holder that is attached to rotatable member of a fixture, wherein an axis of the holder is parallel to an axis of rotation of the rotatable member. The method also includes transporting the fixture into a coating chamber wherein a direction of an exit stream of a coater in oriented perpendicularly to the axis of rotation, exposing the fixture and the component to a reverse transfer arc cleaning/pre-heating procedure, and exposing the fixture and the component to a coating procedure during which a coating is directed at the component in a direction perpendicular to the axis of rotation while the rotatable member is rotating. The method further includes transporting the fixture and removing the component from the support fixture.

Switch assemblies and switching methods are disclosed. In some embodiments, a switch assembly may include a first blade having a first contact within an enclosed cavity, and a second blade having a second contact within the enclosed cavity. The first and second contacts are operable to make or break contact with one another in response to a magnetic field. The switch assembly may further include a coating formed over each of the first and second contacts, the coating including a titanium layer, a second layer formed over the titanium layer, and a tungsten-copper layer formed over the second layer. In some embodiments, the second layer is copper or molybdenum.

Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

A superconducting device which includes a substrate, multiple niobium leads formed on the substrate, a niobium silicide (NbSi.sub.x) passivation layer formed on a surface of at least one of the multiple niobium leads, and an aluminum lead formed directly on at least a portion of the NbSi.sub.x passivation layer such that an interface therebetween is substantially free of oxygen and oxidized material, where the multiple niobium leads and the aluminum lead are constructed to carry a supercurrent while in use.