Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.

The present disclosure relates to a decoration element comprising a light reflective layer; a light absorbing layer provided on the light reflective layer; and a color developing layer comprising a color film provided on a surface opposite to the surface facing the light absorbing layer of the light reflective layer, between the light reflective layer and the light absorbing layer, or on a surface opposite to the surface facing the light reflective layer of the light absorbing layer.

Disclosed herein are systems and methods for physical vapor deposition silicon nitride coatings. The methods thereof may include a creating a magnetically confined plasma near a surface of a silicon nitride. The plasma may cause positively charged energetic ions from the plasma to collide with negatively charged silicon nitride atoms, causing the silicon nitride atoms to be sputtered and deposited on a substrate such as titanium. The silicon nitride coating may be nitrogen-rich silicon nitride or silicon-rich silicon nitride.

Provided is a carrier-attached metal foil which can suppress the number of foreign matter particles on the surface of a metal layer to enhance circuit formability, and can keep stable releasability even after heating at a high temperature of 240° C. or higher (for example, 260° C.) for a long period of time. The carrier-attached metal foil includes a carrier, a release functional layer provided on the carrier, the release functional layer including a metal oxynitride, and a metal layer provided on the release functional layer.

A transparent substrate provided with a multilayer film includes: a transparent substrate having two main surfaces; and a multilayer film obtained by laminating a metal oxide layer and a silicon oxide layer in order on at least one of the main surfaces of the transparent substrate. SiO.sub.x in at least one silicon oxide layer in the multilayer film satisfies a relationship 1.55≤x<2.00. The multilayer film has a luminous transmittance of 20% to 89% and a resistance value of 10.sup.4 Ω/sq or higher. x in SiO.sub.x is a value determined by depth direction composition analysis in X-ray photoelectron spectroscopy (XPS) using argon ion sputtering. When the silicon oxide layer is an outermost layer, the value of x is determined excluding a point where a sputtering time is 0 minute.

A multilayer ceramic capacitor includes a body having a dielectric layer and internal electrodes disposed to be alternately exposed to the third and fourth surfaces with the dielectric layer interposed therebetween. External electrodes include connection parts respectively formed on opposing surfaces of the body, band parts formed to extend from the connection parts to portions of side surfaces of the body, and corner parts in which the connection parts and the band parts are contiguous. A thickness of each of the external electrodes may be 50 nm to 2 μm. The external electrodes may be formed using a barrel-type sputtering method. A ratio t2/t1 may satisfy 0.7 to 1.2, where t1 is a thickness of each connection part and t2 is a thickness of each band part. A ratio t3/t1 may satisfy 0.7 to 1.0, where t3 is a thickness of each corner part.

A method of manufacturing a copper thin film using a single-crystal copper target, and more particularly, a method of manufacturing a copper thin film using a single-crystal copper target, wherein a copper thin film is deposited on a sapphire disk substrate through high-frequency sputtering using a single-crystal copper target grown through a Czochralski process, and may thus exhibit high quality in terms of crystallinity. The method includes depositing a copper thin film on a sapphire disk substrate through a high-frequency sputtering process using a disk-shaped single-crystal copper target obtained by cutting cylindrical single-crystal copper grown through a Czochralski process.

A mask assembly for thin film deposition and a method of manufacturing the same. The mask assembly includes a glass mask having a first surface and a second surface opposite the first surface, a first metal layer patterned above the first surface of the glass mask, and a second metal layer patterned below the second surface of the glass mask. A plurality of deposition areas are arranged on the glass mask, and a plurality of deposition pattern portions each having a plurality of slits are patterned in the plurality of deposition areas.

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.