Patent classifications
C23C14/30
NEGATIVE ELECTRODE PLATE, PREPARATION METHOD THEREOF AND ELECTROCHEMICAL DEVICE
The invention refers to negative electrode plate, preparation method thereof and electrochemical device. The negative electrode plate comprises: a negative current collector, a negative active material layer, and an inorganic dielectric layer which are provided in a stacked manner; the negative active material layer comprises opposite first surface and second surface, wherein the first surface is disposed away from the negative current collector; the inorganic dielectric layer is disposed on the first surface of the negative active material layer and consists of an inorganic dielectric material. The negative electrode plate provided by the application is useful in an electrochemical device, and can result in an electrochemical device having simultaneously excellent safety performance and cycle performance.
NEGATIVE ELECTRODE PLATE, PREPARATION METHOD THEREOF AND ELECTROCHEMICAL DEVICE
The invention refers to negative electrode plate, preparation method thereof and electrochemical device. The negative electrode plate comprises: a negative current collector, a negative active material layer, and an inorganic dielectric layer which are provided in a stacked manner; the negative active material layer comprises opposite first surface and second surface, wherein the first surface is disposed away from the negative current collector; the inorganic dielectric layer is disposed on the first surface of the negative active material layer and consists of an inorganic dielectric material. The negative electrode plate provided by the application is useful in an electrochemical device, and can result in an electrochemical device having simultaneously excellent safety performance and cycle performance.
Method of forming a porous multilayer material
Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.
Method of forming a porous multilayer material
Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.
FOOD PACKAGING BARRIER FILM AND METHOD FOR PRODUCING THE SAME
A food packaging barrier film and a method for producing the same are provided. The method includes providing a base film, depositing an inorganic laminated film on a surface of the base film, and coating a barrier coating solution on the inorganic laminated film and then curing the barrier coating solution to form a barrier coating layer. The inorganic laminated film includes at least one first inorganic material deposition layer and a second inorganic material deposition layer stacked upon each other, and the at least one first inorganic material deposition layer and the second inorganic material deposition layer are formed in a same vacuum deposition process and in a vacuum condition. The at least one first inorganic material deposition layer and the second inorganic material deposition layer are respectively formed by different inorganic metal oxides in the same vacuum depositing process.
FOOD PACKAGING BARRIER FILM AND METHOD FOR PRODUCING THE SAME
A food packaging barrier film and a method for producing the same are provided. The method includes providing a base film, depositing an inorganic laminated film on a surface of the base film, and coating a barrier coating solution on the inorganic laminated film and then curing the barrier coating solution to form a barrier coating layer. The inorganic laminated film includes at least one first inorganic material deposition layer and a second inorganic material deposition layer stacked upon each other, and the at least one first inorganic material deposition layer and the second inorganic material deposition layer are formed in a same vacuum deposition process and in a vacuum condition. The at least one first inorganic material deposition layer and the second inorganic material deposition layer are respectively formed by different inorganic metal oxides in the same vacuum depositing process.
Coating processes for vacuum chamber arrangements and apparatus thereof
Coating processes for vacuum chamber arrangements and apparatus thereof are herein disclosed. In some aspects, a coating process may include coating at least one workpiece using a vacuum chamber arrangement. The vacuum chamber arrangement may include a vacuum chamber, a substrate holding arrangement, an additional substrate holding arrangement, one or more bearings, a supply hose and an additional supply hose. The vacuum chamber may include a lock chamber, an additional lock chamber, a heating chamber, an additional heating chamber, and a coating chamber. The one or more bearings may support the substrate holding arrangement in such a way that it can be moved between the lock chamber and the coating chamber. The one or more bearings may also support the additional substrate holding arrangement in such a way that it can be moved between the additional lock chamber and the coating chamber.
Coating processes for vacuum chamber arrangements and apparatus thereof
Coating processes for vacuum chamber arrangements and apparatus thereof are herein disclosed. In some aspects, a coating process may include coating at least one workpiece using a vacuum chamber arrangement. The vacuum chamber arrangement may include a vacuum chamber, a substrate holding arrangement, an additional substrate holding arrangement, one or more bearings, a supply hose and an additional supply hose. The vacuum chamber may include a lock chamber, an additional lock chamber, a heating chamber, an additional heating chamber, and a coating chamber. The one or more bearings may support the substrate holding arrangement in such a way that it can be moved between the lock chamber and the coating chamber. The one or more bearings may also support the additional substrate holding arrangement in such a way that it can be moved between the additional lock chamber and the coating chamber.
WAFER STACK WITH MgO DIRECTLY ON INSULATING LAYER
A method includes depositing a crystalline magnesium oxide (MgO) seed layer directly on an amorphous insulating cladding layer by a physical vapor deposition (PVD) process, and depositing a crystalline electro-optic layer directly on the crystalline MgO seed layer.
WAFER STACK WITH MgO DIRECTLY ON INSULATING LAYER
A method includes depositing a crystalline magnesium oxide (MgO) seed layer directly on an amorphous insulating cladding layer by a physical vapor deposition (PVD) process, and depositing a crystalline electro-optic layer directly on the crystalline MgO seed layer.