Provided is a sputtering target containing 0.05 at % or more of Bi, and having a total content of metal oxides of from 10 vol % to 70 vol %, the balance containing at least Ru.

An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.

The preparation method for a nano composite coating having a shell-simulated multi-arch structure includes: constructing a discontinuous metal seed layer using a vacuum plating technology; and inducing the deposition of a continuous multi-arch structure layer utilizing the discontinuous metal seed layer, thereby realizing the controllable orientated growth of the nano composite coating having the shell-simulated multi-arch structure. The nano composite coating having the shell-simulated multi-arch structure is of a red abalone shell-simulated nacreous layer aragonite structure, meanwhile has high hardness and high temperature resistance, has excellent performances such as high breaking strength, low friction coefficient and corrosion and abrasion resistance in seawater under the condition of maintaining good breaking tenacity, is simple and controllable in preparation process and low in cost, has unlimited workpiece shapes, is easily produced on large scale, and has huge potential in the fields of new energy, efficiency power, ocean engineering, nuclear energy, and micro-electronic/optoelectronic devices.

Provided is a method for arranging a protective coating for a thermally stressed structure, having at least one layer of alpha-aluminium oxide or of element-modified alpha-aluminium oxide, and wherein the protective coating is applied by reactive cathodic arc vaporization. A protective coating produced by the method and a component having a protective coating is also provided.

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.

Provided is an Fe—Pt—BN-based sputtering target that has a high relative density and that suppresses particle generation.

The Fe—Pt—BN-based sputtering target has, as a residue after dissolution in aqua regia measured by a procedure below, the particle size distribution in which D90 is 5.5 μm or less and a proportion of fine particles smaller than 1 μm is 35% or less. The procedure includes: (1) cutting out an about 4 mm-square sample piece from the sputtering target, followed by pulverizing to prepare a pulverized product; (2) classifying the pulverized product using sieves of 106 μm and 300 μm in opening size and collecting a powder that has passed through the 300 μm sieve and remained on the 106 μm sieve; (3) immersing the powder in aqua regia heated to 200° C. to prepare a residue-containing solution in which the powder has been dissolved; (4) filtering the residue-containing solution through a 5A filter paper specified in JIS P 3801 and drying a residue on the filter paper at 80° C. to prepare a residue powder; (5) dispersing the residue powder in water containing a surfactant to prepare a sample solution; and (6) setting the sample solution in a particle size analyzer and measuring the particle size distribution.

An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A method of preparing an ITO ceramic target includes that: In.sub.2O.sub.3 powder with mass fraction of 90˜97 and SnO.sub.2 powder with mass fraction of 10˜3 are ball-milled and mixed with deionized water, diluent, binder and polymer material by a sand mill to obtain an ITO ceramic slurry with a solid content between 70˜80% and a viscosity between 120˜300 mpa.Math.s, with an average particle size D50 of the mixed powder controlled at 100˜300 nm; the ITO ceramic slurry is shaped by a pressure grouting to obtain an ITO ceramic green body with a relative density of 58˜62%; the ITO ceramic green body is put into a degreasing and sintering integrated furnace, and under a degreasing temperature of 700˜800° C., the ITO ceramic target is degreased in an atmospheric oxygen atmosphere for the time set to 12˜36 hours; the temperature increases from the degreasing temperature to the first sintering temperature of 1,600˜1,650° C.