Provided is a joined body of a target material and a backing plate, the joined body comprising: a target material containing Ta; and a backing plate joined to the target material, wherein a tensile strength between the target material and the backing plate is 20 kg/mm.sup.2 or more, and the target material has an average hydrogen content of 7 ppm by volume or less.

The present disclosure relates to the field of vapor deposition technologies, and discloses a vapor deposition method. The vapor deposition method includes: applying an exciting acoustic wave to the target, such that particles in a predetermined location of the target break away from the target and adhere to a predetermined region of the substrate when an energy of the particles is higher than an energy required for the particles to break away from the target. By using the vapor deposition method, losses of vapor deposition materials may be avoided, utilization of the vapor deposition materials may be increased, and thus costs may be reduced.

A method for forming a film of an oxide of In, Ga, and Zn, having a spinel crystalline phase comprises providing a substrate in a chamber; providing a sputtering target in said chamber, the target comprising an oxide of In, Ga, and Zn, wherein: In, Ga, and Zn represent together at least 95 at % of the elements other than oxygen, In represents from 0.6 to 44 at % of In, Ga, and Zn, Ga represents from 22 to 66 at % of In, Ga, and Zn, and Zn represents from 20 to 46 at % of In, Ga, and Zn; and forming a film on the substrate, the substrate being at a temperature of from 125° C. to 250° C., by sputtering the target with a sputtering gas comprising O.sub.2, the sputtering being performed at a sputtering power of at least 200 W.

[SUMMARY] A sputtering method includes disposing a carbon target (Tg) and a film-forming object (Wf) inside a vacuum chamber (1); evacuating the vacuum chamber to a predetermined pressure by a vacuum pump (Vp); subsequently introducing a sputtering gas into the vacuum chamber; charging the target with electric power to form a plasma atmosphere such that the target gets sputtered by the ions of the sputtering gas in the plasma, whereby carbon particles splashed from the target are caused to be adhered to, and deposited on, a surface of the film-forming object, thereby forming a carbon film. The target is cooled by heat exchanging with a first refrigerant at least during the time when the target receives radiant heat from the plasma; wherein the temperature of the first refrigerant is controlled to keep the temperature of the first refrigerant below 263K.

The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu.sub.11In.sub.9 compound phase exist, and an XRD peak ratio I(In)/I(Cu.sub.11In.sub.9) between the In single phase and the Cu.sub.11In.sub.9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu.sub.11In.sub.9 compound phase is 150 m or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.

Sputtering printheads, additive manufacturing systems comprising the same, and methods for additive manufacturing are provided. Sputtering printheads of the present invention use a plasma to sputter a feedstock material which is directed towards a target. A printhead can include a heater to heat the feedstock to, or near, the material's melting point as it is being sputtered to increase the deposition rate. A convergent nozzle can also increase the deposition rate. Printheads of the present invention are readily reconfigurable such that the same printhead can be used to deposit different materials, such as metals and non-metals, in succession by replacing the feedstock material and making changes to a few settings. Additive manufacturing systems of the present invention can be operated at normal room temperatures and pressure.

An apparatus for protecting an interior surface of a fusion reactor vessel. The apparatus comprises a power supply operably connected to an electrode for insertion into the vessel. The apparatus supports a solid material within the vessel, and is configured such that power supplied to the electrode within the vessel causes a plasma located in proximity to the solid material to sputter the solid material in order to deposit a protective material on said interior surface.

According to various embodiments, the temperature control roller may comprise: a cylindrical roller shell, which has a multiplicity of gas outlet openings; a temperature control device, which is configured to supply and/or extract thermal energy to or from the cylindrical roller shell; multiple gas lines made to extend along the axis of rotation; a gas distributing structure, which couples the multiple gas lines and the multiplicity of gas outlet openings to one another in a gas-conducting manner, the gas distributing structure having a lower structure density than the multiplicity of gas outlet openings.

A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400 C., allowing the copper material to cool to a temperature from about 325 C. to about 350 C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

A device includes a housing unit and a number of magnets. The housing unit includes a number of holes therein. The magnets are positioned in the holes. The magnets have a same pole orientation. It is appreciated that the magnets are positioned in the holes to form a mechanically balanced and magnetically unbalanced structure.