A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400 C., allowing the copper material to cool to a temperature from about 325 C. to about 350 C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

A device includes a housing unit and a number of magnets. The housing unit includes a number of holes therein. The magnets are positioned in the holes. The magnets have a same pole orientation. It is appreciated that the magnets are positioned in the holes to form a mechanically balanced and magnetically unbalanced structure.

The present invention provides a technique for performing film formation at low cost without causing a short-circuit between sputtered films formed on opposite surfaces of a film-formation target substrate. According to the present invention, in a substrate-holder conveyance mechanism 3, a substrate holder 11 is conveyed by a first conveyance portion so that the substrate holder 11 passes through a first film formation region; film formation is performed by sputtering on a first surface of a film-formation target substrate 50 held by the substrate holder 11; the substrate holder 11 is conveyed from the first conveyance portion to a second conveyance portion in such a manner as to make a turn with the up/down orientation of the substrate holder 11 maintained; the substrate holder 11 is conveyed by the second conveyance portion in a direction opposite to the direction of conveyance by the first conveyance portion so that the substrate holder 11 passes through a second film formation region; and film formation is performed by sputtering on a second surface of the film-formation target substrate 50. The substrate holder 11 has openings 14 and 15 through which first and second surfaces of the film-formation target substrate 50 are exposed, and includes a shield portion 16 for shielding an edge portion of the film-formation target substrate 50 from a film formation material supplied from a second sputtering source.

The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a Cu.sub.11In.sub.9 compound phase exist, and an XRD peak ratio I(In)/I(Cu.sub.11In.sub.9) between the In single phase and the Cu.sub.11In.sub.9 compound phase is in a range of 0.01 to 3. The average grain size of the Cu.sub.11In.sub.9 compound phase is 150 m or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.

Sputtering printheads, additive manufacturing systems comprising the same, and methods for additive manufacturing are provided. Sputtering printheads of the present invention use a plasma to sputter a feedstock material which is directed towards a target. A printhead can include a heater to heat the feedstock to, or near, the material's melting point as it is being sputtered to increase the deposition rate. A convergent nozzle can also increase the deposition rate. Printheads of the present invention are readily reconfigurable such that the same printhead can be used to deposit different materials, such as metals and non-metals, in succession by replacing the feedstock material and making changes to a few settings. Additive manufacturing systems of the present invention can be operated at normal room temperatures and pressure.

A mobile target coating device includes: a target source; a target source carrier section configured to carry and drive the target source to move; an infrared temperature detecting section configured to detect a temperature of a surface of the target source; an infrared heating section configured to heat the target source; a control section configured to receive a detection signal of the infrared temperature detecting section and determine whether the temperature of the surface of the target source is uniform or not; the control section is further configured to control the infrared heating section to heat a portion having a lower temperature of the surface of the target source and to stop heating after the temperature of the surface of the target source becomes uniform. A coating method using a mobile target coating device is also disclosed.

A method for manufacturing an acoustic wave device with an excellent frequency-temperature profile is performed such that the acoustic wave device produced includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a dielectric film mainly including Si and O and arranged on the piezoelectric substrate to cover the IDT electrode. The dielectric film is formed by sputtering in a sputtering gas containing H.sub.2O.