A process for producing magnetic nanowires of high quality and a good production yield is disclosed. The process comprises sputtering a target of a magnetic material using a plasma, growing nanoparticles from the sputtered matter to magnetic nanoparticles and collecting the magnetic nanoparticles on a substrate in the form of nanowires.

A method of forming a semiconductor structure includes, in a radio frequency (RF) deposition chamber, depositing a titanium film using physical vapor deposition and forming a graded hard mask film by reactive sputtering the titanium film with nitrogen in the RF deposition chamber. The graded hard mask film is a titanium nitride film with a graded vertical concentration of nitrogen. The method may further include, during deposition of the titanium film and during formation of the graded hard mask film, modulating one or more parameters of the RF deposition chamber, such as modulating an auto capacitance tuner (ACT) current, modulating the RF power, and modulating the pressure of the RF deposition chamber.

The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.

An apparatus and a method for coating an inner wall of a metal tube are provided. The apparatus for coating an inner wall of a metal tube includes mounting posts on which both end openings of a metal tube are mounted and configured to block the inside of the metal tube from the ambient air so that a pressure in the metal tube is adjustable by the vacuum exhaust and inflow of process gases, a sputtering target metal tube installed inside the metal tube coaxially with the metal tube, a pulse electromagnet installed around an outside perimeter of the metal tube coaxially with the metal tube to apply a pulse magnetic field in an axial direction of the metal tube, an electromagnetic pulse power supply unit configured to apply pulse power to the pulse electromagnet, and a sputtering pulse power supply unit configured to synchronize a negative high-voltage pulse with the pulse power applied to the pulse electromagnet and apply to the sputtering target metal tube.

The invention relates to a sliding element, in particular a piston ring, to a method for producing same, and to the use of the sliding element in a tribological system. The sliding element has a coating which has at least one adhesive layer and a MAX phase layer from the inside towards the outside. The MAX phase layer has the composition M.sub.n+1AX.sub.n (n=1, 2, 3), wherein M represents an element from the group Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, and Ta, A represents an element from the group Al, Si, P, S, Ga, Ge, As, Cd, In, Sn, Tl, and Pb, and X represents the elements C or N.

There is provided a cathode unit for a sputtering apparatus, having a construction in which a target can be replaced without opening a vacuum chamber to the atmosphere. The cathode unit having targets and being adapted to be mounted on a vacuum chamber has: a supporting frame mounted on an external wall of the vacuum chamber; an annular moveable base supported by the supporting frame in a manner to be movable toward or away from the vacuum chamber; a rotary shaft body rotatably supported by the movable base in a manner to be elongated through an inner space of the movable base in parallel with a sputtering surface of the target; provided an axial direction of the rotary shaft body is defined to be an X-axis direction, and a forward or backward direction orthogonal to the X-axis direction of the movable base is defined to be a Z-axis direction.

Disclosed is a substrate treating apparatus for performing a predetermined treatment on a substrate. The apparatus includes: a holding mechanism including a plurality of support pins configured to rotate between a holding position and a delivery position, a first magnetic part configured to rotate the support pins individually between the holding position and the delivery position by switching surrounding magnetic poles, and a second magnetic part configured to rotate the support pins individually to the holding position by constantly applying a magnetic field to the first magnetic part; and a switching mechanism configured to apply no magnetic field of a third magnetic part to the first magnetic part normally and apply a magnetic field of the third magnetic part to the first magnetic part to rotate the support pins individually to the delivery position only when the substrate is delivered.

Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.

Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm.sup.2, and the substrate has a temperature in the range of 200-600? C.

A deposition apparatus includes a shield member having a lattice shape in a plan view, the lattice shape including short side edges extending along a first direction and long side edges extending along a second direction, the short side edges including first and second short side edges, a bracket member including a first bracket member coupled to the first short side edge, and a second bracket member coupled to the second short side edge, a plurality of anode bars extending along the second direction and stably placed on each of the first bracket member and the second bracket member, and a target member covering the plurality of anode bars. An anode bar of the plurality of anode bars protrudes outward beyond at least one of the first bracket member and the second bracket member, and the anode bar is physically separated from the shield member by the bracket member.