A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.

A sputter deposition source for depositing a material on a substrate is described. The sputter deposition source includes an array of magnetron sputter cathodes arranged in a row for coating the substrate in a deposition area on a front side of the array. At least one magnetron sputter cathode of the array includes a first rotary target rotatable around a first rotation axis (A1); and a first magnet assembly arranged in the first rotary target and configured to provide a closed plasma racetrack (P) on a surface of the first rotary target that extends along the first rotation axis (A1) on a first side and on a second side of the at least one magnetron sputter cathode. Further described is a magnetron sputter cathode for a sputter deposition source and a method of depositing a material on a substrate.

Sputtering machines and substrate holders for such systems are described which include one or more magnets apart from the magnets typical of sputtering guns. The added magnets produce a magnetic field bias which is a new means for controlling depositional flux. ionization degree of a sputtered species. and microstructure properties of deposited coatings. An exemplary substrate holder may have a magnet or magnet array near or next to the surface supporting the substrate, and the magnet may assume multiple different magnetic field configurations depending on the desired properties of the resulting magnetic field bias within the reaction chamber.

[Problem] To provide a means for forming a thin-film in a desired part of an object to be treated. [Solution] The thin-film formation means according to the present invention is part of a thin-film formation method which supplies electricity to a raw-material gas in a reduced pressure container, converting the raw-material gas to plasma, and irradiates the plasma, thus forming a thin-film on the surface of an object to be treated. Therein, the effect of a magnetic field generated by a magnetic field generating means is used to form the thin-film in a desired part. The effect of the magnetic field focuses the flux of the plasma in a desired part of the surface of the object to be treated, thus enabling the thin-film to be formed in the desired part.

A processing apparatus according to an embodiment includes a container, a workpiece placement unit, a collimator, and a magnetic field generation unit. The workpiece placement unit on which a workpiece is to be placed so that particles are stacked on the workpiece is provided inside the container. The collimator is provided inside the container, and includes a first surface, a second surface opposite to the first surface, and a through hole penetrating the first surface and the second surface. The magnetic field generation unit is provided inside the container and generates a magnetic field between the first surface and the second surface inside the through hole.

To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than 3%, preferably less than or equal to 2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition.

A magnetic recording medium includes a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer, a perpendicular magnetic layer, and a protective layer arranged in this order. The perpendicular magnetic layer includes a first magnetic layer and a second magnetic layer from the non-magnetic substrate side in this order. The second magnetic layer contains a magnetic grain and provided farthest from the non-magnetic substrate. The first magnetic layer has a granular structure that contains an oxide in a grain boundary. The second magnetic layer has a granular structure that contains a carbide of an element contained in the magnetic grain in a grain boundary.

A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400 C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300 C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.